Electroluminescence efficiencies of erbium in silicon-based hosts

Cueff, Sébastien; Ramírez, J. M.; Kurvits, Jonathan A.; Berencén, Yonder; Zia, Rashid; Garrido, B.; Rizk, R.; Labbé, Christophe

doi:10.1063/1.4829142

Cited by 38 publications

(28 citation statements)

References 36 publications

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“…Only a few works are dedicated to study the optoelectronic properties of such materials. 5,6 As a consequence, the excitation mechanisms of luminescent centers and the correlation with the carrier transport inside Er-SRN films are still not well understood and are often subject of controversy among authors. Efficient Er sensitization from the SiN x matrix has been proposed to explain the observed Er electroluminescence (EL) and the high excitation cross-section extracted ($10 À15 cm 2 ) under Poole-Frenkel conduction.…”

Section: Introductionmentioning

confidence: 99%

Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

Ramírez

Cueff

Berencén

et al. 2014

Journal of Applied Physics

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International audienceErbium-doped silicon-rich nitride electroluminescent thin-films emitting at 1.54 μm have been fabricated and integrated within a metal-oxide-semiconductor structure. By gradually varying the stoichiometry of the silicon nitride, we uncover the role of silicon excess on the optoelectronic properties of devices. While the electrical transport is mainly enabled in all cases by Poole-Frenkel conduction, power efficiency and conductivity are strongly altered by the silicon excess content. Specifically, the increase in silicon excess remarkably enhances the conductivity and decreases the charge trapping; however, it also reduces the power efficiency. The main excitation mechanism of Er3+ ions embedded in silicon-rich nitrides is discussed. The optimum Si excess that balances power efficiency, conductivity, and charge trapping density is found to be close to 16%

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Section: Introductionmentioning

confidence: 99%

Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

Ramírez

Cueff

Berencén

et al. 2014

Journal of Applied Physics

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“…Cueff et al have recently presented strong evidence that hot carrier injection is significantly more efficient than defect-assisted conduction for the electrical excitation of Er 3þ ions in the MOS devices. 3 So far, developing Er-doped light-emitting MOS devices with low driven voltages, long operation time, and efficient electrical excitation of Er 3þ ions is still a pressing issue for silicon photonics. In this regard, exploring desirable host materials for Er 3þ ions is of significance.…”

mentioning

confidence: 99%

“…[1][2][3][4][5][6] As the natural oxide of silicon, SiO 2 is the most preferred host for Er 3þ ions. However, the EL from Erdoped SiO 2 (SiO 2 :Er) suffers from uncomfortably high driven voltages and EL quenching due to the excellent insulation of SiO 2 host and electron trapping, respectively.…”

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confidence: 99%

Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO2 films on silicon

Zhu

Wang

et al. 2015

Applied Physics Letters

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We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared (NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO2 (CeO2:Er) films on silicon. The onset voltage of such EL under either forward or reverse bias is smaller than 10 V. Moreover, the EL quenching can be avoidable for the CeO2:Er-based MOS devices. Analysis on the current-voltage characteristic of the device indicates that the electron transportation at the EL-enabling voltages under either forward or reverse bias is dominated by trap-assisted tunneling mechanism. Namely, electrons in n+-Si/ITO can tunnel into the conduction band of CeO2 host via defect states at sufficiently high forward/reverse bias voltages. Then, a fraction of such electrons are accelerated by electric field to become hot electrons, which impact-excite the Er3+ ions, thus leading to characteristic emissions. It is believed that this work has laid the foundation for developing viable silicon-based emitters using CeO2:Er films.

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“…2). The charge carrier transport in such systems was intensively studied in previous investigations 20,21 and is assumed to be governed by Fowler-Nordheim injection, trap assisted tunneling, or Poole-Frenkel conduction. The transitions between the different modes of conduction are smooth and depend on several parameters, including the band offsets and the local electric field at the injecting interface as well as the density and trap characteristics of the different defect types.…”

mentioning

confidence: 99%

Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition

Rebohle

Braun

Wutzler

et al. 2014

Applied Physics Letters

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Electroluminescence efficiencies of erbium in silicon-based hosts

Cited by 38 publications

References 36 publications

Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO2 films on silicon

Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition

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