Electroluminescence from Boron Nitride

Larach, Simon; Shrader, Ross E.

doi:10.1103/physrev.102.582

Cited by 34 publications

(17 citation statements)

References 6 publications

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“…1͑a͒ and 1͑b͔͒ has been reported in the past by numerous groups either in 10,43,46,47 or photoluminescence experiments. 10,14,[39][40][41][42]44,45,47,48 Some authors have assigned it to intrinsic luminescence of hBN molecular layers 47 or to phonon-assisted band-edge luminescence.…”

Section: A Luminescence Of Polycrystalline Hbn Samplesmentioning

confidence: 99%

“…1 have been recently reported on photoluminescence and cathodoluminescence experiments of commercial hBN powder. 10,[39][40][41][42][43][44][45][46][47][48] However, in these publications, no distinctions were made between the broad band and structured emissions. We now assign the structured UV emission to impurities ͑probably C͒ and the broadband emission to deep DAP of strongly localized center.…”

Section: A Luminescence Around 4 Ev In Hbn Powder Samplesmentioning

confidence: 99%

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Defect-related photoluminescence of hexagonal boron nitride

Museur

Feldbach²,

Kanaev³

2008

Phys. Rev. B

234

227

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Photoluminescence of polycrystalline hexagonal boron nitride ͑hBN͒ was measured by means of time-and energy-resolved spectroscopy methods. The observed bands are related to donor-acceptor pair transitions, impurities, and structural defects. The excitation of samples by high-energy photons above 5.4 eV enables a phenomenon of photostimulated luminescence ͑PSL͒, which is due to distantly trapped conduction band electrons and valence band holes. These trapped charges are metastable and their re-excitation with low-energy photons results in anti-Stokes photoluminescence. The comparison of photoluminescence excitation spectra and PSL excitation spectra allows band analysis that supports the hypothesis of Frenkel-type exciton in hBN with a large binding energy.

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Section: A Luminescence Of Polycrystalline Hbn Samplesmentioning

confidence: 99%

Section: A Luminescence Around 4 Ev In Hbn Powder Samplesmentioning

confidence: 99%

Defect-related photoluminescence of hexagonal boron nitride

Museur

Feldbach²,

Kanaev³

2008

Phys. Rev. B

234

227

View full text Add to dashboard Cite

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“…Luminescence properties of high purity commercially available hBN microcrystal powders have been largely studied in cathodoluminescence [2][3][4][5] and photoluminescence [6][7][8][9][10][11][12][13][14] experiments. Due to the synthesis methods used, these powders are inherently contaminated by carbon, calcium and oxygen impurities.…”

Section: Therefore It Is Of Interest To Analyze and Compare Luminescmentioning

confidence: 99%

Photoluminescence properties of pyrolytic boron nitride

Museur

Kanaev

2009

J Mater Sci

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Abstract.We report on spectroscopic study of pyrolytic hBN (pBN) by means of time-and energyresolved photoluminescence methods. A high purity of pBN samples (though low crystallinity) allows complementary information about excited states involved into the luminescence process. We affirm our recent conclusions about the impurity-related nature of most of the fluorescence bands in microcrystalline hBN. In addition, a broad band centred at 3.7 eV previously not considered because of its superposition with an intense structured impurity emission is attributed to the radiative recombination of deep DAPs.3

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“…(5), Larach et al (6), Gelling et al (7), and others, but it seems that a unified discussion on firing condition and EL properties has not been achieved. For example, the optimum firing condition differs from composition to composition, and parameters involved in EL characteristics vary with composition.…”

mentioning

confidence: 95%

Red Electroluminescent (Zn, Cd)(S, Se)-Type Phosphors

Hariu

Seki

Miyashita

et al. 1968

J. Electrochem. Soc.

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Red light emitting electroluminescent phosphors in the (Zn,Cd)(S,Se):Cu system were investigated. The best red electroluminescent phosphor is obtained by firing (0.9Zn,0.1Cd)(0.1S,0.9Se) adding Cu, 5 x 10 -3 g-atom/mole and the same coactivator concentration at 1000 ~ N ll00~ Electroluminescent and photoluminescent properties of phosphors of various composition were interpreted by curves illustrating the energy level variation with composition in solid solution, which is obtained by considering nearest-neighbor effects, and a temperature quenching factor in electroluminescence. From similar considerations, the variation of luminescent properties of phosphors of given composition, containing given luminescent centers, can be predicted, and the critical frequency of excitation when developing electroluminescent phosphors of a given color is presented.A (Zn,Cd) (S,Se) system as red light emitting electroluminescent (EL) phosphors has been developed for a part of its composition by Palilla and Baid (1), Matsuo et al. (2), Mironov and Markovskii (3), and Kolomoitsev et al. (4) in the course of our investigation, and earlier by Hegyi etal. (5), Larach et al. (6), Gelling et al. ( 7), and others, but it seems that a unified discussion on firing condition and EL properties has not been achieved. For example, the optimum firing condition differs from composition to composition, and parameters involved in EL characteristics vary with composition. Thus a question arises, "how shall we expect the possibility of (Zn,Cd)(S,Se) as long wavelength light emitting phosphors?" Solid solutions have been extensively prepared recently to change energy gap continuously for the purpose of matching the exciting or the emitting energy.In this system, a knowledge about the impurity energy level variation with composition as well as about the energy gap variation is indispensable, for the former is undoubtedly very sensitive to optical and electrical properties.In this paper we tried to give a systematic discussion on the above problem, and to give basic considerations on the impurity energy level variation in this system in connection with them.

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Electroluminescence from Boron Nitride

Cited by 34 publications

References 6 publications

Defect-related photoluminescence of hexagonal boron nitride

Defect-related photoluminescence of hexagonal boron nitride

Photoluminescence properties of pyrolytic boron nitride

Red Electroluminescent (Zn, Cd)(S, Se)-Type Phosphors

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