Electroluminescence from Er and Yb co-doped silicon dioxide layers: The excitation mechanism

Prucnal, S.; Rebohle, L.; Skorupa, W.

doi:10.1016/j.jnoncrysol.2010.12.002

Cited by 5 publications

(3 citation statements)

References 17 publications

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“…For the diode under high reverse bias, the electrons and holes, which were created and accelerated in the depletion region due to the high electric field, transfer the energy to excite Er ions by impact ionization [9,53,54] and cause the emissions of the diode. In Figure 4, two emission bands in the visible range related to the energy state transitions of Er 3+ of 2 H 11/2 → 4 I 15/2 (around 532 nm) and 4 S 3/2 → 4 I 15/2 (around 553 nm) [55] can be observed. Compared to the reported emission spectra in the ZnO:Er diode [22], little spectral difference can be observed in the MgZnO:Er samples.…”

Section: Resultsmentioning

confidence: 97%

Thickness Study of Er-Doped Magnesium Zinc Oxide Diode by Spray Pyrolysis

et al. 2018

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Erbium-doped magnesium zinc oxides were prepared through spray pyrolysis deposition at 450 °C with an aqueous solution containing magnesium nitrate, zinc acetate, erbium acetate, and indium nitrate precursors. Diodes with different erbium-doped magnesium zinc oxide thicknesses were fabricated. The effect of erbium-doped magnesium zinc oxide was investigated. The crystalline structure and surface morphology were analyzed using X-ray diffraction and scanning electron microscopy. The films exhibited a zinc oxide structure, with (002), (101), and (102) planes and tiny rods in a mixed hexagonal flakes surface morphology. With the photoluminescence analyses, defect states were identified. The diodes were fabricated via a metallization process in which the top contact was Au and the bottom contact was In. The current–voltage characteristics of these diodes were characterized. The structure resistance increased with the increase in erbium-doped magnesium zinc oxide thickness. With a reverse bias in excess of 8 V, the light spectrum, with two distinct green light emissions at wavelengths of 532 nm and 553 nm, was observed. The light intensity that resulted when using a different operation current of the diodes was investigated. The diode with an erbium-doped magnesium zinc oxide thickness of 230 nm shows high light intensity with an operational current of 80 mA. The emission spectrum with different injection currents for the diodes was characterized and the mechanism is discussed.

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Section: Resultsmentioning

confidence: 97%

Thickness Study of Er-Doped Magnesium Zinc Oxide Diode by Spray Pyrolysis

et al. 2018

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“…The emission bands are related to the energy state transitions of Er 3+ of 2 H 11/2 → 4 I 15/2 (520-540 nm), 4 S 3/2 → 4 I 15/2 (549-555 nm), and 4 F 9/2 → 4 I 15/2 (650-670 nm). (43) The fine structure in the emission band is caused by the variation of the host structure. (44) In sample S1, the weak emission intensity may be caused by the low Er content.…”

Section: Resultsmentioning

confidence: 99%

Resistance Study of Er-doped Zinc Oxide Diode by Spray Pyrolysis

2018

Sensors and Materials

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Undoped and erbium-doped zinc oxide followed by indium-doped zinc oxide layers on p-type Si substrate were prepared by spray pyrolysis with zinc acetate, erbium acetate, and indium nitrate precursors. The surface morphology and crystalline quality were investigated. Using a front-and backside metallization process, diodes were fabricated. The current-voltage characteristics of these diodes were analyzed. The structural resistance, which is an important issue in gas sensing application, shows an increase-decrease behavior with the increase of erbium contents in zinc oxide. With a reverse bias in excess of 6 V, two distinct green light emissions with 536 and 555 nm wavelength and one red light emission at around 664 nm of the 5% erbium-doped zinc oxide diode can be observed. The structural resistance character, as well as the ideality factor of these diodes were analyzed and discussed.

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“…As the Er doped region in the pn diode dominates the diode breakdown conditions, controlled carrier concentrations in the Er doped diode under sufficient Er doping becomes important. In regarding the dopings with the Er-containing materials, much work was performed on their energy transfer mechanism [11][12][13][14][15], but there was less discussion regarding the carrier concentration. Zhong [16] prepared Er doped and Er,N codoped ZnO by implantation and found the luminescence difference by forming Er-O-N complexes.…”

Section: Introductionmentioning

confidence: 99%

On the Nitrogen Doping in Erbium and Nitrogen Codoped Magnesium Zinc Oxide Diode by Spray Pyrolysis

et al. 2020

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Diodes with an erbium and nitrogen codoped magnesium zinc oxide (MgZnO:Er,N) active layer were fabricated by spray pyrolysis on Si substrate with aqueous solutions including magnesium nitrate, zinc acetate, erbium acetate, ammonium acetate, and indium nitrate precursors. Diodes with different nitrogen content in their precursor were prepared and their properties were investigated. With scanning electron microscopy, film surface with mixed hexagonal flakes and tiny blocks was characterized for all samples. Certain morphologies varied for samples with different N contents. In the photoluminescence analyses, the intensity of the oxygen-related defects peak increased with the increasing of nitrogen content. The diodes were fabricated with an Au and In deposition on the top and backside. The diode current–voltage as well as capacitance–voltage characteristics were examined. An ununiformed n-type concentration distribution with high concentration near the interface in the MgZnO:Er,N layer was characterized for all samples. Diodes with high nitrogen content exhibit reduced breakdown voltage and higher interface concentration characteristics. Under reversed bias conditions with an injection current of 50 mA, a light spectrum with two distinct green emissions around wavelengths 532 and 553 nm was observed. A small spectrum variation was characterized for diodes prepared from different nitrogen content. The diode luminescence characteristics were examined and the diode prepared from N/Zn=1 in the precursor showed an optimal injection current-to-luminescence property. The current and luminescence properties of the diode were characterized and discussed.

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Electroluminescence from Er and Yb co-doped silicon dioxide layers: The excitation mechanism

Cited by 5 publications

References 17 publications

Thickness Study of Er-Doped Magnesium Zinc Oxide Diode by Spray Pyrolysis

Thickness Study of Er-Doped Magnesium Zinc Oxide Diode by Spray Pyrolysis

Resistance Study of Er-doped Zinc Oxide Diode by Spray Pyrolysis

On the Nitrogen Doping in Erbium and Nitrogen Codoped Magnesium Zinc Oxide Diode by Spray Pyrolysis

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