Electroluminescence from Er-doped GeO2 nanofilms fabricated by atomic layer deposition on silicon: Effect of annealing temperature on film properties

Ma, Ruisong; Zhang, Yu; Ye, Zejun; Yang, Yang; Sun, Jiaming

doi:10.1016/j.apsusc.2023.158187

Applied Surface Science

2023

DOI: 10.1016/j.apsusc.2023.158187

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Electroluminescence from Er-doped GeO2 nanofilms fabricated by atomic layer deposition on silicon: Effect of annealing temperature on film properties

Ruisong Ma

Yu Zhang

Zejun Ye

et al.

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2024

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Cited by 6 publications

References 43 publications

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Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

Ghazy,

Zanders,

Devi

et al. 2024

Adv Materials Inter

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High‐quality rare earth element (R) based thin films are in demand for applications ranging from (opto)electronics and energy conversion/storage to medical diagnostics, imaging and security technologies. Atomic layer deposition (ALD) offers large‐area homogeneous and conformal ultrathin films and is uniquely suited to address the requirements set by the potential applications of R‐based thin films. The history starts from the 1990s, when the first electroluminescent R‐doped thin films were grown with ALD. The interest soon expanded to rare earth element oxide layers as high‐k gate dielectrics in semiconductor devices, and later to complex ternary and quaternary perovskite oxides with novel functional properties. The most recent advancements related to the combined atomic/molecular layer deposition (ALD/MLD) have rapidly expanded the family of R‐organic hybrid materials with intriguing luminescence and up‐conversion properties. This review provides up‐to‐date insights to the current state of ALD and ALD/MLD research of R‐based thin films and highlights their application potential.

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Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

Ghazy,

Zanders,

Devi

et al. 2024

Adv Materials Inter

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Er‐Doped MgAl₂O₄ Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition

Yu,

Guo,

Yan

et al. 2024

Advanced Optical Materials

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Er3+‐doped polycrystalline MgAl2O4 (MAO:Er) spinel nanofilms are deposited via atomic layer deposition, and the metal‐oxide–semiconductor light emitting devices are fabricated. The crystallinity and morphology of the MAO:Er nanofilms are explored by modifying the annealing temperatures, Al2O3/MgO ratios and Er2O3 dopant cycles. The similar electroluminescence (EL) emissions peaking at 1530 nm indicates the identical crystal field environment for the doped Er3+ ions. The concentration quenching is verified to occurs via the energy transfer among the neighboring Er3+ ions. The optimal device (800 °C‐annealed, Al2O3/MgO ratio close to stoichiometry, Er3+: 1.85 mol%) yields the highest external quantum efficiency of 28%, the power efficiency of 0.32% and the optical power density of 14.62 mW cm−2. The smooth MAO:Er spinel nanofilms with the low refractive index and high resistance ensure the highly efficient light extraction and the generation of energetic electrons for the impact excitation of Er3+ ions. The trap‐assisted tunneling under operation electric field dominates the conduction mechanism for the EL emissions. The estimated decay lifetime of 1154.4 µs and a large‐stimulated emission cross‐section in the order of 10−15–10−14 cm2 are revealed from the EL emissions. Intense near‐infrared emissions from these Si‐based MAO:Er devices have great potential in the optoelectronic applications.

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Encapsulation of Er-doped GeO2 nanofilms by Al2O3 atomic layers: Surficial sensitivity to trimethylaluminum and improvement on electroluminescence

Ye,

Ma,

Guo

et al. 2024

Ceramics International

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Electroluminescence from Er-doped GeO2 nanofilms fabricated by atomic layer deposition on silicon: Effect of annealing temperature on film properties

Cited by 6 publications

References 43 publications

Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

Er‐Doped MgAl₂O₄ Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition

Encapsulation of Er-doped GeO2 nanofilms by Al2O3 atomic layers: Surficial sensitivity to trimethylaluminum and improvement on electroluminescence

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Electroluminescence from Er-doped GeO2 nanofilms fabricated by atomic layer deposition on silicon: Effect of annealing temperature on film properties

Cited by 6 publications

References 43 publications

Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

Er‐Doped MgAl2O4 Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition

Encapsulation of Er-doped GeO2 nanofilms by Al2O3 atomic layers: Surficial sensitivity to trimethylaluminum and improvement on electroluminescence

Contact Info

Product

Resources

About

Er‐Doped MgAl₂O₄ Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition