Electroluminescence from MOS Capacitors with Si Implanted Oxide on p-type and n-type Si Substrate

Ultraviolet and white electroluminescence from metal–oxide–semiconductor devices fabricated by spin-coating of gadolinium organic compounds on silicon

“…27) The addition of Dy and La, however, scarcely affected V R . The steeply increasing I G at V R was similar to the cases of the blue/green EL MOS devices with a heavy Si implantation into SiO 2 12,13,16,28) and the green/red EL MOS devices fabricated by spin-coating of [Tb,(Tb + Ba)]/ (Tb + Eu) organic compounds on Si substrates. 26,27) I G at V R or over can inject hot electrons into the insulator from the Si White EL emission could be seen with the naked eye in the dark.…”

“…The horizontal axes from 1.2 to 4.2 eV correspond to the wavelength range from 1000 to 300 nm. The spectra are normalized to the maximum intensity and fitted to the following equation for G i : 12,13,26,27) G…”

“…Si-based light-emitting devices, which have superior process compatibility with Si metal-oxide-semiconductor (MOS) LSIs, are very attractive for realizing microdisplays for integrated intelligent displays in portable systems, as well as optical interconnections that reduce metal wire delay. A number of Si-based electroluminescence (EL) MOS devices have been proposed for optoelectronic applications, for example, Si/Ge/C-nanocrystals embedded in the oxide layer by cosputtering 1) /chemical vapor deposition (CVD) 2) or ion implantation of Si/Ge/Sn 3) /Ge 4) /Si [5][6][7][8][9][10][11][12][13] into thermal SiO 2 . Recently, it has been reported that MOS devices with SiO 2 implanted with rare-earth elements (Gd, 14) Ce+Gd, 15) Tb, 16) Eu, 17) and Er 18) ) exhibit UV (³320 nm), blue (³440 nm), green (³550 nm), red (³620 nm), and IR (³1540 nm) EL emission, respectively, and giant stability enhancement was also reported for the rare-earth-implanted SiO 2 light-emitting devices with an additional SiON protection layer.…”

Electroluminescence color tuning between green and red from metal–oxide–semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

“…32) The V R values of the #2[+Eu1]-#10[+Eu400] devices coated with the (Tb + Ba)=Eu liquids were in the range of 10-12 V, which were slightly lower than that of #1 [+Ba]. I G steeply increasing with V R was similar to that in the case of EL MOS devices fabricated by heavy Si implantation into SiO 2 12,13,16,36) and by spin-coating organic compound liquids on Si substrates. [31][32][33][34] Figure 2(b) shows the Fowler-Nordheim (FN) plots [i.e., log(I=V 2 ) vs 1=V plots] for the #0…”

“…Their various applications are expected, for example, in integrated intelligent displays in wearable or portable systems such as head-mounted displays and microdisplays for wristband terminals, and in optical interconnections for intra-or interchip communication instead of metal wires for delay reduction. Major examples of Si-based electroluminescence (EL) MOS devices that have been proposed so far are Si, Ge, and C nanocrystals embedded in the oxide layer by cosputtering, 1) chemical vapor deposition (CVD), 2) or ion implantation of Si, Ge, Sn, 3) Ge, 4) or Si [5][6][7][8][9][10][11][12][13] into thermal SiO 2 . Recently, it has been reported that MOS devices with SiO 2 implanted with rareearth elements (Gd, 14) Ce + Gd, 15) Tb, 16) Eu, 17) and Er 18) ) exhibit UV (∼320 nm), blue (∼440 nm), green (∼550 nm), red (∼620 nm), and IR (∼1540 nm) EL emissions, respectively.…”