Electroluminescence from ZnO nanorods with an n-ZnO/p-Si heterojunction structure

Sun, Hui; Zhang, Qifeng; Wu, Jinlei

doi:10.1088/0957-4484/17/9/033

Cited by 156 publications

(92 citation statements)

References 12 publications

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“…ZnO nanowire arrays have been fabricated on p-type GaN thin fi lms [11 13] and p-type Si substrates [14]. Hybrid inorganic/organic LEDs have also been studied, employing ZnO nanowire arrays and poly(3,4-ethylene-dioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS) thin films [15,16] and further work has succeeded in making the devices fl exible [17].…”

Section: Nano Researchmentioning

confidence: 99%

Vertical nanowire array-based light emitting diodes

2008

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Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin fi lm grown by metal organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin fi lm through a simple low temperature solution method. The fabricated devices exhibit diode like current voltage behavior. Electroluminescence is visible to the human eye at a forward bias of 10 V and spectroscopy reveals that emission is dominated by acceptor to band transitions in the p-GaN thin fi lm. It is suggested that the vertical nanowire architecture of the device leads to waveguided emission from the thin fi lm through the nanowire array.

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Section: Nano Researchmentioning

confidence: 99%

Vertical nanowire array-based light emitting diodes

2008

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“…16,17 Despite this, the evidence of excitonic recombination in electroluminescent ZnO devices has been indirect, and inferred from a peak emission energy smaller than what one would expect for band-to-band recombination. 12,[18][19][20][21] The main drawback of the ZnO material system is the lack of reproducible, stable, high-quality p-type doping with a reasonable concentration, which is required for most optoelectronic applications. 13 In our recent demonstration, the heterojunction is formed between the n-ZnO nanowire and a p-Si substrate.…”

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confidence: 99%

Exciton-related electroluminescence from ZnO nanowire light-emitting diodes

Zimmler

Voss

Ronning³

et al. 2009

Applied Physics Letters

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The authors study the microscopic origin of the electroluminescence from zinc oxide (ZnO) nanowire light-emitting diodes (LEDs) fabricated on a heavily doped p-type silicon (p-Si) substrate. By comparing the low-temperature photoluminescence and electroluminescence of a single nanowire LED, bound- and free-exciton related recombination processes, together with their longitudinal-optical phonon replicas, can be identified as the origin of both electroluminescence and photoluminescence.

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“…10 10 cm -2 nanorods simultaneously instead of on a single nanowire. For the 1D nanodevice arrays manufactured vertically on the substrate, [19][20][21] the impedance-analysis method would provide a simple approach to determining the electrical properties of their 1D semiconductor nanostructures.…”

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confidence: 99%

Fabrication and Impedance Analysis of n‐ZnO Nanorod/p‐Si Heterojunctions to Investigate Carrier Concentrations in Zn/O Source‐ Ratio‐Tuned ZnO Nanorod Arrays

Wong

2007

Advanced Materials

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Determination of the electrical properties of 1D semiconductor nanostructures is important for material and growth process development as well as for further nanodevice design. Gate-dependent electrical-transport measurements of singlenanowire field-effect transistors (FETs) have been employed to investigate the electrical-transport properties of semiconductor nanowires.[ Apart from the Hall effect measurement for thin-film semiconductor materials, the capacitance-voltage (C-V) measurement is an alternative method of determining the doping concentrations in semiconductors. [5][6][7] Schottky or pn junctions, in which one side of the junction is much more heavily doped than the other side, are employed for C-V analysis. A fixed dc reverse bias with a small ac voltage superimposed on it is applied to the sample to measure the junction capacitance at a fixed frequency. The inverse capacitance squared is a linear function of the applied reverse-biased voltage; from this the built-in potential of the junction and the carrier concentration of the lightly doped side can be estimated from the intercept and the slope, respectively. [5] This Mott-Schottky approach is also taken when a Schottky barrier is formed at the interface of the semiconductor film and electrolyte to monitor the carrier concentrations of the semiconductor electrodes. [8][9][10] C-V

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Electroluminescence from ZnO nanorods with an n-ZnO/p-Si heterojunction structure

Cited by 156 publications

References 12 publications

Vertical nanowire array-based light emitting diodes

Vertical nanowire array-based light emitting diodes

Exciton-related electroluminescence from ZnO nanowire light-emitting diodes

Fabrication and Impedance Analysis of n‐ZnO Nanorod/p‐Si Heterojunctions to Investigate Carrier Concentrations in Zn/O Source‐ Ratio‐Tuned ZnO Nanorod Arrays

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