Electroluminescence of as-sputtered silicon-rich SiOx films

Zhang, Wa Li; Zhang, Sam; Yang, Ming; Liu, Zhen; Cen, Z. H.; Chen, T. P.; Liu, Dongping

doi:10.1016/j.vacuum.2009.10.042

Cited by 19 publications

(13 citation statements)

References 36 publications

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“…3, the increase in x value results in a decrease in the metallic Si component and a concomitant increase in the SiO 2 component, thereby varying the densities of the Si suboxide states, consistent with the previous report. 17 For the SRO layers with x Ն 1.6, only Si 4+ peak dominantly remains with almost no Si 0+ one, indicating minimal existence of the Si suboxide states, responsible for the very-small memory window at x Ն 1.6, as shown in Fig. 2.…”

Section: Methodsmentioning

confidence: 82%

“…By deconvoluting the spectrum of the SiO 1.0 layer, five chemical structures corresponding to the Si oxidation states, Si n+ ͑n=0-4͒ are clearly discerned at binding energies of 99.7, 100.6, 101.4, 102.5, and 103.7 eV, as reported before. 16 Three partial oxidation states, Si 1+ , Si 2+ , and Si 3+ are attributed to Si atoms with different number of nearestneighbor O atoms, and so they contain high-density O-deficient defect centers such as neutral oxygen vacancy and nonbridging oxygen hole centers, 17 which could act as charge-trap centers for NVMs. As shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

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Nonvolatile memories by using charge traps in silicon-rich oxides

Lim

Kim

Hong

et al. 2010

Journal of Applied Physics

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The nonvolatile memory characteristics of silicon-rich oxide (SRO, SiOx) grown at room temperature for charge-trapping layer are first reported and shown to exhibit a strong dependence on oxygen content (x). The memory window that is estimated by capacitance-voltage curves monotonically decreases with increasing x from 1.0 to 1.8, possibly resulting from the x-dependent variation in the Si suboxide states responsible for the charge traps, as evidenced by x-ray photoelectron spectroscopy. The density of the charge traps is estimated to be (3.9–8.8)×1012 cm−2 for x=1.0–1.4. The charge-loss rate sharply decreases at x=1.2, but by further increase in x above 1.2, it gradually increases, which can be explained by the lowered SRO/SiO2 barrier due to the increased optical band gap of SRO at larger x

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Section: Methodsmentioning

confidence: 82%

Section: Methodsmentioning

confidence: 99%

Nonvolatile memories by using charge traps in silicon-rich oxides

Lim

Kim

Hong

et al. 2010

Journal of Applied Physics

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“…In [16], SiO 2 layers were grown by the CVD method at 550°C, which contained silicon clusters (8-10 nm) observed using transmission elec tron spectroscopy. In [17,18], SiO x samples were obtained using radio frequency (magnetron) sputter ing. The presence of silicon clusters in SiO x was detected using Raman spectroscopy.…”

Section: Discussionmentioning

confidence: 99%

Large-scale potential fluctuations caused by SiO x compositional inhomogeneity

Novikov

Gritsenko

2012

Phys. Solid State

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The short range order in amorphous SiO x (0 ≤ x ≤ 2) films has been studied by high resolution X ray photoelectron spectroscopy. Both the random bonding and random mixture models do not describe experimental photoelectron spectra of SiO x (x ≤ 2). An intermediate model of the SiO x structure has been proposed. The measured photoelectron spectra of the SiO x (x ≤ 2) valence band indicate the presence of the silicon phase and silicon oxide.

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“…In Figure 2b, the analysis in-depth profile of an SRO film with 5.2 at.% of Si-excess compared to a SiO 2 film is shown. It can be seen that silicon content in SRO film increase respect to SiO [22,23]. The contributions of the intermediate Si peaks (Si +1 , Si +2 , Si +3 ) corresponding to the suboxide phases become smaller when the SRO films are thermally annealed at 1100°C, while Si +4 peak for SiO 2 and Si 0 peak for elemental Si becomes dominant, especially the intensity of Si 0 peak increases (Figure 3b), explaining the Si-SiO 2 phase separation and Si-NCs formation after annealing, as shown by similar results found by Chen et al [24].…”

Section: Sro Monolayersmentioning

confidence: 95%

Synthesis and Luminescent Properties of Silicon Nanocrystals

Coyopol-Solís¹,

Díaz-Becerril²,

Garcı́a-Salgado³

et al. 2018

Nanocrystals and Nanostructures

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Nowadays, study of silicon-based visible light-emitting devices has increased due to large-scale microelectronic integration. Since then different physical and chemical processes have been performed to convert bulk silicon (Si) into a light-emitting material. From discovery of Photoluminescence (PL) in porous Silicon by Canham, a new field of research was opened in optical properties of the Si nanocrystals (Si-NCs) embedded in a dielectric matrix, such as SRO (silicon-rich oxide) and SRN (silicon-rich nitride). In this respect, SRO films obtained by sputtering technique have proved to be an option for light-emitting capacitors (LECs). For the synthesis of SRO films, growth parameters should be considered; Si-excess, growth temperature and annealing temperature. Such parameters affect generation of radiative defects, distribution of Si-NCs and luminescent properties. In this chapter, we report synthesis, structural and luminescent properties of SRO monolayers and SRO/SiO 2 multilayers (MLs) obtained by sputtering technique modifying Si-excess, thickness and thermal treatments.

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Electroluminescence of as-sputtered silicon-rich SiOx films

Cited by 19 publications

References 36 publications

Nonvolatile memories by using charge traps in silicon-rich oxides

Nonvolatile memories by using charge traps in silicon-rich oxides

Large-scale potential fluctuations caused by SiO x compositional inhomogeneity

Synthesis and Luminescent Properties of Silicon Nanocrystals

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