Electroluminescence of organic light-emitting diodes with an ultra-thin layer of dopant

Li, Weizhi; Yu, Junsheng; Wang, Tao; Jiang, Yadong; Wei, Bangxiong

doi:10.1016/j.mseb.2007.11.027

Cited by 11 publications

(4 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, OLEDs with dopant-free and ultrathin emissive layers (UEMLs) have aroused much attention 22 23 24 25 26 27 28 29 30 31 32 . Chen et al 23 replaced conventional host-dopant systems with non-doped ultrathin bluish-green and red dyes to achieve high-efficiency white OLEDs.…”

mentioning

confidence: 99%

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

Sun

et al. 2016

Sci Rep

View full text Add to dashboard Cite

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

show abstract

mentioning

confidence: 99%

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

Sun

et al. 2016

Sci Rep

View full text Add to dashboard Cite

show abstract

“…However, when the DCJTB concentration exceeded 0.1 wt%, the luminance intensity decreased considerably due to the concentration-quenching effect [22]. Although maximum luminance and current efficiency were obtained when the DCJTB concentration was 0.1 wt%, the emitted color was somewhat red-shifted, with CIE coordinates of (0.433, 0.429).…”

Section: Resultsmentioning

confidence: 98%

High stability white organic light-emitting diode fabricated with the deposition of solvent premixed sources

Yang

Huang

Chang

et al. 2011

Journal of Luminescence

View full text Add to dashboard Cite

“…However, the enhanced bandgap indicates the Fermi level shift toward the conduction band, which facilitates efficient free charge carrier conduction. [ 13,60 ] The current density and respective turn‐on voltage for BVO thin films are shown in Figure 9 and the estimated values are given in Table 2 . The commercially available standard LiF sample sample used EOD exhibits the current density of 29.5 mA cm −2 and respective turn‐on voltage of 4.09 eV.…”

Section: Resultsmentioning

confidence: 99%

Spin‐Coated Bismuth Vanadate Thin Film as an Alternative Electron Transport Layer for Light‐Emitting Diode Application

Solly

Ramasamy

Poobalan

et al. 2021

Physica Status Solidi (a)

View full text Add to dashboard Cite

This study describes the bismuth vanadate thin films (BVO) as an alternative electron transport layer for widely used LiF for the electron‐only device (EODs) application. The BVO thin film is spin‐coated on a glass substrate as a function of solution concentration. The X‐ray diffraction pattern of the film deposited from 10 × 10−3m (BVO1) to 150 × 10−3m (BVO4) solution concentration possesses the BiVO4 phase with a tetragonal structure, whereas the film deposited at 200 × 10−3m (BVO5) shows the Bi2V4O11 phase with an orthorhombic structure. The surface morphology of the films confirms nanoparticle formation with the lower surface roughness. The UV–visible studies show the average transmittance of the films decreases with increasing solution concentration and the maximum average transmittance of 86% is obtained in BVO1 film. This oxygen vacancy promotes the charge transfer process very effectively. The EODs fabricated using BVO1 film (BiVO4 phase) exhibits the maximum current density of 59.2 mA cm−2 with a turn‐on voltage of 4.09 V, whereas the EOD device fabricated using BVO5 film (Bi2V4O11 phase) possesses the current density of 5.9 mA cm−2 with a turn‐on voltage of 4.09 V. Hence, the fabricated EODs using the BVO electron transport layer shows applicability in the OLED device.

show abstract

Electroluminescence of organic light-emitting diodes with an ultra-thin layer of dopant

Cited by 11 publications

References 15 publications

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

High stability white organic light-emitting diode fabricated with the deposition of solvent premixed sources

Spin‐Coated Bismuth Vanadate Thin Film as an Alternative Electron Transport Layer for Light‐Emitting Diode Application

Contact Info

Product

Resources

About