Electroluminescence of silicon nanocrystals in MOS structures

Franzò, G.; Irrera, Alessia; Moreira, Eduardo Ceretta; Miritello, M.; Iacona, Fabio; Sanfilippo, D.; Stefano, G. Di; Fallica, P. G.; Priolo, F.

doi:10.1007/s003390101019

Cited by 256 publications

(165 citation statements)

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“…1,2 Recently, it has been proposed to use them in solar cells for down-conversion, to generate multi-excitons or as a top absorber in multifunction solar systems. [3][4][5][6][7] Several different methods for fabricating Si-NCs, all compatible with the semiconductor industry standards, have been developed, such as ion implantation, 8 cosputtering, 9 or plasma enhanced or low pressure chemical vapor deposition (CVD).…”

Section: Introductionmentioning

confidence: 99%

Tailoring the surface density of silicon nanocrystals embedded in SiOx single layers

Hernández

Miska

Grün

et al. 2013

Journal of Applied Physics

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In this article, we explore the possibility of modifying the silicon nanocrystal areal density in SiO x single layers, while keeping constant their size. For this purpose, a set of SiO x monolayers with controlled thickness between two thick SiO 2 layers has been fabricated, for four different compositions (x ¼ 1, 1.25, 1.5, or 1.75). The structural properties of the SiO x single layers have been analyzed by transmission electron microscopy (TEM) in planar view geometry. Energy-filtered TEM images revealed an almost constant Si-cluster size and a slight increase in the cluster areal density as the silicon content increases in the layers, while high resolution TEM images show that the size of the Si crystalline precipitates largely decreases as the SiO x stoichiometry approaches that of SiO 2 . The crystalline fraction was evaluated by combining the results from both techniques, finding a crystallinity reduction from 75% to 40%, for x ¼ 1 and 1.75, respectively. Complementary photoluminescence measurements corroborate the precipitation of Si-nanocrystals with excellent emission properties for layers with the largest amount of excess silicon. The integrated emission from the nanoaggregates perfectly scales with their crystalline state, with no detectable emission for crystalline fractions below 40%. The combination of the structural and luminescence observations suggests that small Si precipitates are submitted to a higher compressive local stress applied by the SiO 2 matrix that could inhibit the phase separation and, in turn, promotes the creation of nonradiative paths. V C 2013 AIP Publishing LLC.

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Section: Introductionmentioning

confidence: 99%

Tailoring the surface density of silicon nanocrystals embedded in SiOx single layers

Hernández

Miska

Grün

et al. 2013

Journal of Applied Physics

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“…Silicon based light sources have been widely investigated for their implementation in integrated photonic circuits [1][2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μm

Ramírez¹,

Jambois²,

Berencén³

et al. 2012

Materials Science and Engineering: B

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a b s t r a c tWe present a electroluminescence (EL) study of the Si-rich silicon oxide (SRSO) LEDs with and without Er 3+ ions under different polarization schemes: direct current (DC) and pulsed voltage (PV). The power efficiency of the devices and their main optical limitations are presented. We show that under PV polarization scheme, the devices achieve one order of magnitude superior performance in comparison with DC. Time-resolved measurements have shown that this enhancement is met only for active layers in which annealing temperature is high enough (>1000 • C) for silicon nanocrystal (Si-nc) formation. Modeling of the system with rate equations has been done and excitation cross-sections for both Si-nc and Er 3+ ions have been extracted.

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“…On the other hand, excellent optical properties were obtained by using silicon-rich-silicon-oxide (SRSO), which consists of nanocluster Si (nc-Si) embedded inside an SiO 2 matrix [4]. Although optical gain [5] as well as efficient LED [6] have been demonstrated, SiO 2 matrix makes current injection difficult, resulting in requirement of high voltages or thin SRSO layers for LED operation. Furthermore, excitation occurs via impact excitation by energetic carriers, which raises questions about the long-term reliability of such devices.…”

Section: Introductionmentioning

confidence: 99%

Optical activation of Si nanowires using Er-doped, sol-gel derived silica

et al. 2005

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Optical activation of Si nanowires (Si-NWs) using sol-gel derived Er-doped silica is investigated. Si-NWs of about 100 nm diameter were grown on Si substrates by the vapor-liquidsolid method using Au catalysts and H 2 diluted SiCl 4 . Afterwards, Er-doped silica sol-gel solution was spin-coated, and annealed at 950 °C in flowing N 2 /O 2 environment. Such Er-doped silica/Si-NWs nanocomposite is found to combine the advantages of crystalline Si and silica to simultaneously achieve both high carrier-mediated excitation efficiency and high Er 3+ luminescence efficiency while at the same time providing high areal density of Er 3+ and easy current injection, indicating the possibility of developing sol-gel activated Si-NWs as a new material platform for Si-based photonics.

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Electroluminescence of silicon nanocrystals in MOS structures

Cited by 256 publications

References 0 publications

Tailoring the surface density of silicon nanocrystals embedded in SiOx single layers

Tailoring the surface density of silicon nanocrystals embedded in SiOx single layers

Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μm

Optical activation of Si nanowires using Er-doped, sol-gel derived silica

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