2000
DOI: 10.1557/proc-621-q4.3.1
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Electroluminescent Oxide Phosphor Thin Films Prepared by a Sol-gel Process

Abstract: Ga2O3:Mn and (Ga2O3-SnO2):Eu thin films have been prepared by a sol-gel process. High luminance emissions were obtained in TFEL devices: green using a Ga2O3:Mn and red using a Ga2O3:Eu or a SnO2:Eu thin-film emitting layer. These sol-gel prepared devices were produced without using any vacuum processes and always exhibited higher luminances than equivalent devices prepared by r.f. magnetron sputtering: 40, 309 and above 1000 cd/m2 using SnO2:Eu, Ga2O3:Eu and Ga2O3:Mn phosphor thin films, respectively, in TFEL … Show more

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Cited by 9 publications
(2 citation statements)
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“…In the monoclinic structure of β-Ga 2 O 3 , the Ga 3 þ ions are accommodated in the non-equivalent tetrahedral (A) and octahedral (B) sites. The properties of β-Ga 2 O 3 , such as transportation [4][5][6][7][8][9], magnetism [10][11][12][13][14], and photoluminescence [15][16][17][18], can be greatly affected by the substitution of Ga 3 þ ions with the doped impurities. The previous investigations on the doping of β-Ga 2 O 3 indicate that compared with the Ga 3 þ ion ( $ 0.62 Å), the doped ion with a larger radius, such as Ti 4 þ [6], Cr 2 þ [19,20], Mn 2 þ [21,22], Fe 3 þ [23,24], In 3 þ [25,26], Er 3 þ [27], and Eu 3 þ [28], tends to occupy the B sites, while the doped ion with a smaller radius prefers to sit at the A site, such as Be 2 þ [26], and Si 4 þ [14].…”
Section: Introductionmentioning
confidence: 99%
“…In the monoclinic structure of β-Ga 2 O 3 , the Ga 3 þ ions are accommodated in the non-equivalent tetrahedral (A) and octahedral (B) sites. The properties of β-Ga 2 O 3 , such as transportation [4][5][6][7][8][9], magnetism [10][11][12][13][14], and photoluminescence [15][16][17][18], can be greatly affected by the substitution of Ga 3 þ ions with the doped impurities. The previous investigations on the doping of β-Ga 2 O 3 indicate that compared with the Ga 3 þ ion ( $ 0.62 Å), the doped ion with a larger radius, such as Ti 4 þ [6], Cr 2 þ [19,20], Mn 2 þ [21,22], Fe 3 þ [23,24], In 3 þ [25,26], Er 3 þ [27], and Eu 3 þ [28], tends to occupy the B sites, while the doped ion with a smaller radius prefers to sit at the A site, such as Be 2 þ [26], and Si 4 þ [14].…”
Section: Introductionmentioning
confidence: 99%
“…As representative examples in this family, Eu 3+ -activated YVO 4 is an important commercial red ( 5 D 0 -7 F 2 of Eu 3+ at 619 nm) phosphor used in color television, the cathode ray tube and the highpressure mercury lamp. And LaPO 4 :Ce, Tb is used as a highly efficient green component in tricolor fluorescent lamps [18]. YPO 4 :Ce is an efficient UV-A phosphor applied in tanning lamps [19] and the white YPO 4 :Nd, YPO 4 :Pr are considered as potential nuclear waste containment hosts [20].…”
Section: Introductionmentioning
confidence: 99%