Solid-state hydrogen storage materials
often operate via transient,
multistep chemical reactions at complex interfaces that are difficult
to capture. Here, we use direct ab initio molecular
dynamics simulations at accelerated temperatures and hydrogen pressures
to probe the hydrogenation chemistry of the candidate material MgB2 without a priori assumption of reaction
pathways. Focusing on highly reactive (101̅0) edge planes where
initial hydrogen attack is likely to occur, we track mechanistic steps
toward the formation of hydrogen-saturated BH4
– units and key chemical
intermediates, involving H2 dissociation, generation of
functionalities and molecular complexes containing BH2 and
BH3 motifs, and B–B bond breaking. The genesis of
higher-order boron clustering is also observed. Different charge states
and chemical environments at the B-rich and Mg-rich edge planes are
found to produce different chemical pathways and preferred speciation,
with implications for overall hydrogenation kinetics. The reaction
processes rely on B–H bond polarization and fluctuations between
ionic and covalent character, which are critically enabled by the
presence of Mg2+ cations in the nearby interphase region.
Our results provide guidance for devising kinetic improvement strategies
for MgB2-based hydrogen storage materials, while also providing
a template for exploring chemical pathways in other solid-state energy
storage reactions.