Electrolyte electroreflectance study of the band offset in a GaAs/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>0.69</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mn>0.31</mml:mn></mml:mrow></mml:msub></mml:m

Raccah, P. M.; Garland, J. W.; Zhang, Z.; Chambers, F. A.; Vezzetti, David J.

doi:10.1103/physrevb.36.4271

Cited by 14 publications

(2 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…23 The basic idea for the use of light scattering is to measure the intersubband transitions in quantum wells from inelastic lightscattering spectra. The method has several appealing features such as the possibility of applying it selectively to the conduction band, where the calculation of energy level is simpler, and the capability to determine the band gap of the barrier material by resonant Raman scattering.…”

Section: Measurement Techniques and Gaas-algaas Valuesmentioning

confidence: 99%

See 1 more Smart Citation

Energy-Band Structure: Band Lineups and Heterojunction Energy-Band Diagrams

Adachi¹

1994

GaAs and Related Materials

View full text Add to dashboard Cite

If two different semiconductors of differing band gap are brought together, their band edges will have one of the alignments shown in Fig. 8.1. At a type I interface, both electrons and holes near the junction tend to migrate to the smaller-gap semiconductor. Therefore, potential barriers exist for both electrons and holes in going from the smaller-gap semiconductor to the larger-gap semiconductor. Interfaces formed by III-V compounds either with different group III elements such as AlAs(AlGaAs)/GaAs or with different group V elements such as GaAs/GaP belong to type I.Interfaces formed by III-V compounds with both different group-Ill elements and different group-V elements belong to type II. 1 The GaSb/InAs system is an example of this type. The difference in the electron affinities of GaSb (4.03 eV) and InAs (4.90 eV) is so large that two forbidden gaps are completely misaligned in energy, resulting in a type II-misaligned interface. At a type Il-staggered interface, electrons and holes tend to separate, each going into a different material. The type Il-staggered interface results if we reduce the electron-affinity difference and raise the band-gap energy of the smaller-gap semiconductor by mixing group III elements or group V elements or both. Examples of type Il-staggered interface include the (Al,Ga)As/AlAs and (Al,In)As/InP systems.The band-gap discontinuities present at any heterojunction interface are a consequence of the difference between the gaps of two semiconductors. As shown in Fig. 8.1, the band-gap difference is distributed between a conduction-band discontinuity AE C and a valence-band discontinuity AE V . In a type I (straddling lineup), we obtain1a) GaAs and Related Materials Downloaded from www.worldscientific.com by UNIVERSITY OF BIRMINGHAM on 08/24/15. For personal use only. ENERGY-BAND STRUCTURE: BAND UNEUPS AND HETEROJUNCTION Figure 8.1 Schematic diagrams showing three representative types of heterostructure interfaces: (a) type I (straddling lineup), (b) type H-misaligned (broken-gap lineup), and (c) type H-staggered (staggered lineup). The lower parts also represent the lineups for real material systems, namely (a) GaAs/AlAs, (b) GaSb/InAs, and (c) A^Ga^As/AlAs.while for type II (broken-gap and staggered lineups) the relation is given bywhere AE g is the band-gap difference. CONDUCTION-AND VALENCE-BAND OFFSETS An OverviewThe fundamental importance of the energy-band offsets for the physics and applications of semiconductor heterostructures has motivated a large body of experimental and theoretical work in this field. In spite of this effort, however, many basic questions remain open. From the experimental point of view, contradictory values have been reported for the most intensively studied system, AljGa^As/GaAs, 2 and also even for the classic textbook-example system, GaAs/Ge. 3 In the past thirty years this has stimulated the development of a number of theoretical approaches to predict the values of AE C and AE V . 4,5 The most widely used theoretical model is the electron-affinity r...

show abstract

Section: Measurement Techniques and Gaas-algaas Valuesmentioning

confidence: 99%

“…x As/GaAs quantum wells. Raccah et al 23 have also deduced the offset ratio 77:23 from the valence and conduction subband energies in AljGa^As/GaAs superlattice measured by electrolyte electroreflectance.…”

Section: Measurement Techniques and Gaas-algaas Valuesmentioning

confidence: 99%