Electrolyte-oxide-semiconductor structures as pH sensors based on resistive-switching characteristic

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

“…Under a reverse bias, the device switched to an HRS by extracting the ions from the SiO 2 layer. The change in the concentration of positive ions in an electrolyte changes the RS properties, allowing the pH of the electrolyte to be determined [ 214 ]. Overall, electrochemically prepared materials have been employed in many sensing applications.…”

“…The contact between the electrolyte and SiO2 layer formed an electric double To the best of our knowledge, there have been no reports of electrochemically prepared RS materials being used for sensing applications, but the working principle of many sensors is based on electrochemical sensing. For example, a pH sensor has been developed that utilizes the RS effect at the electrolyte-oxide-semiconductor interface [214]. The device was fabricated with Pt as the bottom electrode and SiO 2 as the switching layer.…”