2019
DOI: 10.1063/1.5058276
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Electromagnetic enhancement effect on the atomically abrupt heterojunction of Si/InAs heterostructured nanowires

Abstract: Semiconductor nanowires (NWs) present a great number of unique optical properties associated with their reduced dimension and internal structure. NWs are suitable for the fabrication of defect free Si/III-V heterostructures, allowing the combination of the properties of both Si and III-V compounds. We present here a study of the electromagnetic (EM) resonances on the atomically abrupt heterojunction of Si/InAs axially heterostructured NWs. We studied the electromagnetic response of Si/InAs heterojunctions sens… Show more

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Cited by 3 publications
(6 citation statements)
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“…The few existing articles regarding Raman characterization of n-type doped InGaP suggest preferential coupling of the electron plasma oscillations to LO1 phonons. 29 , 44 Peak L1, recorded from the p-doped segments of the NW is in agreement with the data in references. 29 , 44 It has the symmetry of the LO phonon and appears between the LO1 and TOM peaks.…”
Section: Phonon–plasmon Coupled Modessupporting
confidence: 91%
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“…The few existing articles regarding Raman characterization of n-type doped InGaP suggest preferential coupling of the electron plasma oscillations to LO1 phonons. 29 , 44 Peak L1, recorded from the p-doped segments of the NW is in agreement with the data in references. 29 , 44 It has the symmetry of the LO phonon and appears between the LO1 and TOM peaks.…”
Section: Phonon–plasmon Coupled Modessupporting
confidence: 91%
“…Upon fitting the spectra, one obtains a significant decrease of the LO1/LO2 intensity ratio in the p-doped sample, suggesting that the hole plasma oscillations mainly couple to the LO1 phonon mode of InGaP. The few existing articles regarding Raman characterization of n-type doped InGaP suggest preferential coupling of the electron plasma oscillations to LO1 phonons. , Peak L1, recorded from the p-doped segments of the NW is in agreement with the data in references. , It has the symmetry of the LO phonon and appears between the LO1 and TOM peaks. It appears closer to the TOM peak than in the epitaxial layers probably because of the higher hole concentration in the NWs.…”
Section: Phonon–plasmon Coupled Modessupporting
confidence: 87%
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“…Recently, we have reported a significant local enhancement of the Raman signal at the heterojunction (HJ) of axially heterostructured Si/SiGe NWs [21,22] and Si/InAs NWs [23]. This is an interesting issue since the enhancement of the electromagnetic field at the HJ of NWs should provide an additional degree of freedom to engineer the photon absorption and scattering by semiconductor NWs, which should permit to operate photons over different optical resonances.…”
Section: Introductionmentioning
confidence: 99%