Electromagnetic interconnects and passives modeling: software implementation issues

Schoenmaker, Wim; Meuris, Peter

doi:10.1109/43.998625

Cited by 34 publications

(33 citation statements)

References 18 publications

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“…The standard A-V solver was proposed in [1], [2] which is based on the finite volume method (FVM). In the FVM discretization, variables are assigned to the nodes and links of computational grid and associated with geometrical meanings.…”

Section: Background a Standard A-v Solver For Coupled Em-semiconmentioning

confidence: 99%

“…A method breaking the barrier between full-wave EM models and semiconductor models was first proposed in [1], [2], which is named as the A-V solver with scalar potential and vector potential A being the basic unknowns. By simultaneously solving the Maxwell's equations and the semiconductor equations (e.g., driftdiffusion equations) in the frequency domain, the A-V solver sets up a physically consistent and numerically convenient linkage between the EM models and the semiconductor carrier transport models.…”

Section: Introductionmentioning

confidence: 99%

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Process-variation-aware electromagnetic-semiconductor coupled simulation

Chen

Jiang

et al. 2011

2011 IEEE International Symposium of Circuits and Systems (ISCAS)

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We develop a new method based on the high-frequency electromagnetic (EM)-semiconductor coupled simulation to analyze the impact of multi-type process variations happen around semiconductormetal structure. It is competent to simultaneously handle geometrical variations like surface roughness and material variations like semiconductor doping profile, which are difficult for traditional "stand alone" simulation methods. A sparse grid based stochastic spectral collocation method (SSCM) combined with principle factor analysis (PFA) is implemented to accelerate the stochastic simulation. Numerical results confirm the validity and significance of our variational coupled simulation framework. I. INTRODUCTIONWhile the operational frequency is marching into multi-gigahertz, traditional separated characterization of metallic interconnects (fullwave EM) and semiconductor devices (TCAD model) becomes insufficient due to the increasing interactions between EM and semiconductor dynamics. A method breaking the barrier between full-wave EM models and semiconductor models was first proposed in [1], [2], which is named as the A-V solver with scalar potential and vector potential A being the basic unknowns. By simultaneously solving the Maxwell's equations and the semiconductor equations (e.g., driftdiffusion equations) in the frequency domain, the A-V solver sets up a physically consistent and numerically convenient linkage between the EM models and the semiconductor carrier transport models.Process variation is another major concern in submicron technology, which brings undesirable perturbations to the characteristics of devices and interconnects [3]. Generally, process variations affecting integrated circuits can be categorized as geometrical variations and material variations. There have been a number of studies on both types of variations, e.g. surface roughness of metal wire [4] and random dopant fluctuations (RDF) in the semiconductor [5]. Nevertheless, these variations are usually studied within a pure interconnect context or a pure semiconductor context, with the geometrical variations being the major concern in the former while material variations in the latter. This decoupled characterization of process variations is also becoming insufficient given the increasing tight coupling among interconnects and semiconductor.In this paper, we propose a variational A-V solver which allows a convenient and simultaneous characterization of geometrical and material variations in the coupled simulation framework. We believe it is the first time that typical process variations in metallic interconnects and semiconductor, including their mutual intercorrelations, can be simulated in a unified manner, which is very difficult, if not impossible, to be realized with existing decoupled simulation frameworks. Stochastic spectral collocation method (SSCM), is employed to speed up the stochastic analysis. Numerical results then confirm the validity and effectiveness of the proposed method.

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Section: Background a Standard A-v Solver For Coupled Em-semiconmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Process-variation-aware electromagnetic-semiconductor coupled simulation

Chen

Jiang

et al. 2011

2011 IEEE International Symposium of Circuits and Systems (ISCAS)

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“…A widely tested co-simulation framework in the frequency domain was proposed in [1], [2]. The Maxwell's equations are formulated in terms of scalar potential V and vector potential A to obtain straightforward coupling with the drift and diffusion (DD) semiconductor model.…”

Section: Introductionmentioning

confidence: 99%

A fast time-domain EM-TCAD coupled simulation framework via matrix exponential

Chen

Schoenmaker

Weng

et al. 2012

Proceedings of the International Conference on Computer-Aided Design

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We present a fast time-domain multiphysics simulation framework that combines full-wave electromagnetism (EM) and carrier transport in semiconductor devices (TCAD). The proposed framework features a division of linear and nonlinear components in the EM-TCAD coupled system. The former is extracted and handled independently with high efficiency by a matrix exponential approach assisted with Krylov subspace method. The latter is treated by ordinary Newton's method yet with a much sparser Jacobian matrix that leads to substantial speedup in solving the linear system of equations. More convenient error management and adaptive control are also available through the linear and nonlinear decoupling.

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“…For many applications the potential formulation of the Maxwell equations is used which has several advantages. In particular, for interconnect structures the potential formulation allows separate modeling of fields in dielectric, semiconductor and metallic regions, which reduces the computational time essentially [1,2].…”

Section: Introductionmentioning

confidence: 99%

Simulation of Large Interconnect Structures Using ILU-Type Preconditioner

Harutyunyan

Schoenmaker

Schilders

2010

Scientific Computing in Electrical Engineering SCEE 2008

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For a fast simulation of interconnect structures we consider preconditioned iterative solution methods for large complex valued linear systems. In many applications the discretized equations result in ill-conditioned matrices, and efficient preconditioners are indispensable to solve the linear systems accurately. We apply the dual threshold incomplete LU (ILUT) factorization as preconditioners for the BICGSTAB iterative solver. On complicated problems with a different range of frequencies we show that the BICGSTAB method with the ILUT preconditioner provides a very accurate solution of the linear systems.

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Electromagnetic interconnects and passives modeling: software implementation issues

Cited by 34 publications

References 18 publications

Process-variation-aware electromagnetic-semiconductor coupled simulation

Process-variation-aware electromagnetic-semiconductor coupled simulation

A fast time-domain EM-TCAD coupled simulation framework via matrix exponential

Simulation of Large Interconnect Structures Using ILU-Type Preconditioner

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