Electromagnetic Interference (EMI) of System-on-Package (SOP)

Sudô, Toshio; Sasaki, Hideki; Masuda, Norio; Drewniak, James L.

doi:10.1109/tadvp.2004.828817

Cited by 182 publications

(45 citation statements)

References 34 publications

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“…However, the physical proximity of the electromagnetic (EM) noise aggressor, viz., digital components, and the victim, viz., analog components, at such high frequencies may lead to serious electromagnetic interference which, in turn, may degrade the reliability of the devices and the systems. 3,4 This is of serious concern in designing the RF CMOS circuit layout that uses all frequency bands related to 5G. Therefore, to continue miniaturization of radio frequency integrated circuits while maintaining high reliability, either a novel circuit design approach should be adopted or an on-chip EM noise suppressor must be used.…”

Section: Rf Cmos: Requirements and Key Challengesmentioning

confidence: 99%

Magnetic Nanoferrites for RF CMOS: Enabling 5G and Beyond

Sai

Shivashankar

Yamaguchi

et al. 2017

Electrochem. Soc. Interface

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The upcoming 5th generation (5G) telecommunication technology will enable realization of the full potential of the Internet-of-things (IoT) by utilizing various frequency bands, ranging from <4 GHz to 100 GHz. A brief review of the technical requirements of RF CMOS at the unveiling of the 5G system is provided. Key challenges associated with 5G are illustrated, with a focus on the need for, and state of the art of, magnetic materials, especially ferrites, in enhancing the performance of RF integrated circuits. The suitability of a low-temperature, CMOS-compatible, on-chip ferrite thin film deposition technique, which was elusive until recently, is compared with traditional deposition processes for thin ferrite films. The uniqueness of this microwave-irradiation-assisted, far-from-equilibrium, solution-based deposition technique in achieving an unusually high ferromagnetic resonance frequency is discussed. The effect of magnetic ferrite films in niche applications such as in X-band (8~12 GHz) inductors and K-band (18~40 GHz) electromagnetic noise suppressors is discussed and demonstrated.

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Section: Rf Cmos: Requirements and Key Challengesmentioning

confidence: 99%

Magnetic Nanoferrites for RF CMOS: Enabling 5G and Beyond

Sai

Shivashankar

Yamaguchi

et al. 2017

Electrochem. Soc. Interface

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“…A PPW-based PDN has the advantages of easy power sharing, simple design, low cost, and high design flexibility. However, various electrical noises induced by PPW modes are problematic [1,2]. At the frequencies corresponding to the PPW modes, a simultaneous switching noise and radiated emissions are significantly generated, which causes electromagnetic interference and severely degrades the system performance [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Suppression of Parallel Plate Modes Using Edge-Located EBG Structure in High-Speed Power Bus

Cho¹,

Kim²

2016

Journal of information and communication convergence engineerin

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An edge-located electromagnetic bandgap (EL-EBG) structure using a defected ground structure (DGS) is proposed to suppress resonant modes induced by edge excitation in a two-dimensional planar parallel plate waveguide (PPW). The proposed EL-DGS-EBG PPW significantly mitigates multiple transverse-magnetic (TM) modes in a wideband frequency range corresponding to an EBG stopband. To verify the wideband suppression, test vehicles of a conventional PPW, a PPW with a mushroom-type EBG structure, and an EL-DGS-EBG PPW are fabricated using a commercial process involving printed circuit boards (PCBs). Measurements of the input impedances show that multiple resonant modes of the previous PPWs are significantly excited through an input port located at a PPW edge. In contrast, resonant modes in the EL-DGS-EBG PPW are substantially suppressed over the frequency range of 0.5 GHz to 2 GHz. In addition, we have experimentally demonstrated that the EL-DGS-EBG PPW reduces the radiated emission from −24 dB to −44 dB as compared to the conventional PPW.

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“…It has been highly desired to prevent problems in the early stages of design and packaging of electronic components [1,2,3]. Applying an electromagnetic near-field probe is considered very effective to meeting this need because the information so acquired can be used to make a good electrical design [4].…”

Section: Introductionmentioning

confidence: 99%

Ultra small electro-optic field probe fabricated by aerosol deposition

Iwanami

Nakada

Tsuda

et al. 2007

IEICE Electron. Express

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Abstract:We developed a microscopic electro-optic field probe by directly depositing a lead zirconate-titanate [PbZr 0.3 Ti 0.7 O 3 ] film onto the optical fiber edge using aerosol deposition. Its fabrication process is low-cost and relatively easy because there are no complicated procedures such as fine lithography and etching. The lateral size of the film is 125 µm, which is the same as the diameter of a typical single mode fiber, and the thickness is approximately 5 µm. An RF electro-optic signal was successfully measured over a microstrip line. The capability for detecting GHz range fields is also shown. Because it is very tiny and thin, the developed electro-optic probe has great potential for detailed electrical characterization in the microscopic regions of high performance electronic products such as the interconnecting parts between LSI packages and printed circuit boards and spaces among different LSI chips in a package. Keywords: fiber-edge electro-optic probe, aerosol deposition, lead zirconate-titanate film Classification: Photonics devices, circuits, and systems References[1] F. Caignet, S. Delmas-Bendhia, and E. Sicard, "The Challenge of Signal Integrity in Deep-Submicrometer CMOS Technology," Proc. IEEE, vol. 89, no. 4, pp. 556-573, 2001. Tech., vol. 48, no. 12, pp. 2611Tech., vol. 48, no. 12, pp. -2616Tech., vol. 48, no. 12, pp. , 2000 T. Ohara, R. Namiki, K. Igarashi, S. Wakana, and M. Tsuchiya, "Proposal of electro-optic sensor head attached to optical fiber edge," IEICE Technical Report, OPE99-22, pp. 55-60, 1999 (in Japanese

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Electromagnetic Interference (EMI) of System-on-Package (SOP)

Cited by 182 publications

References 34 publications

Magnetic Nanoferrites for RF CMOS: Enabling 5G and Beyond

Magnetic Nanoferrites for RF CMOS: Enabling 5G and Beyond

Suppression of Parallel Plate Modes Using Edge-Located EBG Structure in High-Speed Power Bus

Ultra small electro-optic field probe fabricated by aerosol deposition

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