2015 IEEE Energy Conversion Congress and Exposition (ECCE) 2015
DOI: 10.1109/ecce.2015.7310494
|View full text |Cite
|
Sign up to set email alerts
|

Electromagnetic interference issues of power, electronics systems with wide band gap, semiconductor devices

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
13
0

Year Published

2016
2016
2024
2024

Publication Types

Select...
5
4

Relationship

0
9

Authors

Journals

citations
Cited by 39 publications
(14 citation statements)
references
References 9 publications
1
13
0
Order By: Relevance
“…7 clearly depicts how both the frequency content and magnitude levels has been extended for the SiC MOSFET device when considering the noise source frequency envelopes. Similar trends from experimental measurements has been documented in [57], [61]- [63]. As can be seen from the trends in Fig.…”
Section: A Emi/emc Performancesupporting
confidence: 88%
“…7 clearly depicts how both the frequency content and magnitude levels has been extended for the SiC MOSFET device when considering the noise source frequency envelopes. Similar trends from experimental measurements has been documented in [57], [61]- [63]. As can be seen from the trends in Fig.…”
Section: A Emi/emc Performancesupporting
confidence: 88%
“…Oscillations get more severe in the discrete package due to the high parasitic inductance of the package and printed circuit board (PCB). These oscillations have adverse effects on the convert performance such as additional power losses (Abou-Alfotouh et al, 2006;Chen, 2009;Mermet-Guyennet et al, 2012;Chen, 2014;Nayak et al, 2014;Dong et al, 2015;Jahdi et al, 2015;Liang et al, 2019;Meng et al, 2019), increased EMI noise (Gong et al, 2013;Tsai et al, 2013;Zare et al, 2015;Fang et al, 2017;Zhang et al, 2019;Zhang and Wang, 2020), shoot through (Elbanhawy, 2005;Watanabe and Itoh, 2011;Xu et al, 2013;Yanagi et al, 2014;Zhang Z. et al, 2014;Ishibashi et al, 2015;Yin et al, 2016;Wang et al, 2018) and overshoots in current and voltage (Gamand et al, 2012;Joko et al, 2015;Ando and Wada, 2017;Liang et al, 2017).…”
Section: Switching Oscillation Challengementioning
confidence: 99%
“…A complete EMI loop comprises three main elements: the EMI noise source, the EMI noise propagation path, and the EMI noise victim. In wide-bandgap (WBG) power electronics systems, the EMI issue is becoming an increasingly important consideration, primarily caused by the noise source side, including faster switching speed, higher switching frequency, and more oscillation than the Si counterparts [1]- [7]. In response, researchers have proposed various mitigation techniques at the source side, such as active gate driver methods [8]- [11] or optimized pulse width modulation (PWM) schemes [12]- [15], which can alleviate high commutation spikes and reduce EMI noise generated from the source.…”
Section: Introductionmentioning
confidence: 99%