Electromagnetic interference of repetitive frequency electromagnetic pulses toward hydrogen thyratron trigger

Deren, 冯德仁 Feng; Dawei, 段大卫 Duan; Shunli, 蒋顺利 Jiang; Ping, 苏平 Shu; Bo, 徐波 Xu; Mengfei, 刘梦菲 Liu; Xiaojuan, 徐笑娟 Xu; Chengda, 于成大 Yu

doi:10.3788/hplpb20132507.1856

Cited by 1 publication

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“…Sci. 2023, 13, x FOR PEER REVIEW 2 of 10 environment for the normal operation of the module [19][20][21][22][23][24][25]. In this study, an EMP simulator was used to measure the interference voltages at MCU pins under different voltages and full width at half maximum (FWHM) conditions in a radiation EMP test.…”

Section: Mcumentioning

confidence: 99%

“…Therefore, the failure threshold of the test component is often obtained through the direct injection EMP experiment, and the radiation EMP experiment is used to simulate the real environment. By evaluating the sensitivity of a specific pin or port under strong electromagnetic interference (EMI), the sensitivity of a component-level microcontroller unit (MCU) to different electromagnetic environments can be measured, thereby obtaining the electromagnetic environment for the normal operation of the module [19][20][21][22][23][24][25]. In this study, an EMP simulator was used to measure the interference voltages at MCU pins under different voltages and full width at half maximum (FWHM) conditions in a radiation EMP test.…”

Section: Introductionmentioning

confidence: 99%

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Interferences of Electromagnetic Pulses on Microcontroller Units

Fan

Huang

2023

Applied Sciences

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In this study, electromagnetic interference testing of microcontroller units (MCUs) under different electromagnetic pulse (EMP) amplitudes, full width at half maximum (FWHM), and at different angles was carried out on an EMP cell. The coupling path of the radiation-type EMP experiment on the circuit board is random. However, in several experiments with two pins specific to a certain integrated circuit, by measuring the interference voltage of MCU pins, the statistical results indicate that as the pressure of the air gap switch of the power source increased, both the breakdown voltage and the electric field in the transverse electromagnetic (TEM) cell increased, resulting in higher electromagnetic interference (EMI) received by these two pins. As the capacitance of the storage capacitor increased, the EMI also increased. In addition, the results showed that the interference of EMP on the MCU had strong directionality; i.e., path selectivity, which was related to the structure of the MCU. X-ray imaging of the destroyed MCU showed that when the internal wiring direction of the pin is consistent with the propagation direction of the interference pulse, the EMI was minimal or even unnoticeable.

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