Electromechanical considerations in developing low-voltage RF MEMS switches

Peroulis, Dimitrios; Pacheco, Sergio; Sarabandi, Kamal; Katehi, L.P.B.

doi:10.1109/tmtt.2002.806514

Cited by 261 publications

(165 citation statements)

References 30 publications

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“…They can be described by a spring capacitor model. The electrostatic force associated with the constant voltage drive mode is nonlinear and gives rise to the well known phenomenon of pull-in 4,5 .The electrostatically actuated beams collapse on the ground plane once the highest deflection exceeds approximately one-third of the airgap (d0). Hence in a GLV structure, the airgap between beams and the underlying ground substrate is designed in such a manner that d0/3> λ/4.…”

Section: Introductionmentioning

confidence: 99%

SiGe based grating light valves: A leap towards monolithic integration of MOEMS

Rudra

Roels

Bryce

et al. 2010

Microelectronic Engineering

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The Grating Light Valve (GLV) is a microelectromechanical reflection grating. It operates on the principle of controlled diffraction of incident light due to electrostatic deflection of microbeams, thus producing bright and dark pixels in a display system. This unique approach offers significant advantages compared to other display systems in terms of speed, high optical efficiency, accuracy and ease of manufacturing. At the same time monolithic integration of MEMS on top of CMOS is getting more popular because CMOS-integrated MEMS exhibit less parasitics and have a reduced assembly and packaging cost over hybrid approaches. The relatively low deposition temperature (~450°C) of poly-SiGe compared to poly-Si (~800°C) makes poly-SiGe suitable for back end processing. Hence, in this work we report the fabrication and functioning of CVD poly-SiGe GLVs in terms of their response to the amplitude and frequency of the applied actuation voltage. Introduction:

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Section: Introductionmentioning

confidence: 99%

SiGe based grating light valves: A leap towards monolithic integration of MOEMS

Rudra

Roels

Bryce

et al. 2010

Microelectronic Engineering

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“…For instance, the low-voltage MEMS capacitive shunt switch [8] is done by using 1-5 meanders membrane support structures. The MEMS switches have the pull-down voltages as low as 6 V with gap height of 3-5 µm.…”

Section: Methodsmentioning

confidence: 99%

“…Serpentine beam or meander type beam is designed to achieve the lower spring constant. Adding more meanders can significantly lower the spring constant without excessively increasing the required space [8] as miniaturization is necessary for a device to be embedded in RF applications. Figure 2 shows the design of serpentine spring for the membrane to lower the spring constant.…”

Section: Methodsmentioning

confidence: 99%

“…2, which are used to lower the switch spring constant, the total switch spring constant K z is given by Eq. 3 [8] :…”

Section: Fig 2: Serpentine Spring Designmentioning

confidence: 99%

“…It is also small and consumed low power. Since then, many different types of capacitive MEMS switches have been reported [1][2][3][4][5][6][7][8][9] .…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Design and Simulation of Microelectromechanical SystemCapacitive Shunt Switches

Jaafar¹,

Sidek²,

Miskam³

et al. 2009

American J. of Engineering and Applied Sciences

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Problem statement: RF MEMS switch is one of MEMS area that creates devices that have great potential to improve the performance of communication circuits and systems and enables the realization of micro size mechanical switches embedded in electronics devices. The low voltage switches are necessary due to their compatibility of standard IC technology in RF application and microelectronics systems. In realizing MEMS switches with low actuation voltage, spring constant of beam must be reduced. Design and simulation of capacitive RF MEMS shunt switches with regards to the pull in voltage were presented. Approach: Design and simulation had been done by using commercial simulation package, CoventorWare 2006. Several switches were designed with different meander spring beams to obtain lower voltage actuations using Architect Module in CoventorWare 2006. Results: Results verified with Finite Element Method (FEM) and simple mathematical modeling. Each design gave different voltage actuations. The lowest actuation voltage simulated was 1.9 V. Average difference of simulated and calculated values was about 16%. This is because no fringing field was included in calculation. Finite Element Method (FEM) analysis was done for switch C. Results showed that lower voltage can be obtained by using serpentine spring which lowers the spring constant and pull-in voltage as well. The lower pull-in time was primarily due to its very small dimensions and mass Conclusion: Low-voltage capacitive shunt RF MEMS switches were designed and simulated. These switches had actuation voltages of 1.9-7.0 V depending on the serpentine design. The other performance particularly switch C had a pull-in time of 15 µ sec after a voltage of 0-20 V was applied and the resonant frequency is 3153.1 Hz.

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Rf Mems

2016

Microwave and Millimetre‐Wave Design for Wireless Communications

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Electromechanical considerations in developing low-voltage RF MEMS switches

Cited by 261 publications

References 30 publications

SiGe based grating light valves: A leap towards monolithic integration of MOEMS

SiGe based grating light valves: A leap towards monolithic integration of MOEMS

Design and Simulation of Microelectromechanical SystemCapacitive Shunt Switches

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