Electromigration Effect on the Pd Coated Cu Wirebond

Tajedini, Mohsen; Osmanson, Allison T.; Kim, Yi Ram; Madanipour, Hossein; Kim, Choong-Un; Glasscock, B.

doi:10.1109/ectc32696.2021.00115

Cited by 7 publications

(3 citation statements)

References 13 publications

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“…To solve the above problems, Yuan et al developed a Cu alloy bonding wire with Cu 99.75–99.96 wt%, W 0.01–0.1 wt%, Ag 0.01–0.03 wt%, Sc 0.01–0.02 wt%, Ti 0.001–0.03 wt%, Cr 0.001–0.03 wt%, and Fe 0.001–0.02 wt%, which has outstanding oxidation resistance and corrosion resistance, excellent plasticity and ballability, high electrical conductivity and thermal conductivity, and high strength and bonding reliability that enable it to meet the requirements of electronic packaging on high performance, multifunction, miniaturization, and low cost [ 113 ]. Murali et al [ 114 ] added element of corrosion resistance to Cu to prepare a new alloyed Cu wire, which has homogeneous FAB formation and similar first and second bond bondability to bare Cu wire, and exhibits better electrochemical corrosion resistance and slower interfacial diffusion than that of bare Cu wire as well as higher bonding reliability than that of Au wire after HTST at 175 °C for 2000 h. Krimori et al revealed that Cu bonding wire with oxidation-resistant metal coating Pd presents good bondability and reliability, sufficient to replace Au bonding wire ( Table 2 ) as well as having much lower production cost than that of Au bonding wire [ 115 , 116 ]. In addition, electronic flame off (EFO) current has a strong influence on Pd distribution in the FAB [ 117 ], which has an effect on Cu–Al IMCs growth and thus affects bond strength and reliability [ 111 ].…”

Section: Cu Bonding Wirementioning

confidence: 99%

Research Progress on Bonding Wire for Microelectronic Packaging

et al. 2023

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Wire bonding is still the most popular chip interconnect technology in microelectronic packaging and will not be replaced by other interconnect methods for a long time in the future. Au bonding wire has been a mainstream semiconductor packaging material for many decades due to its unique chemical stability, reliable manufacturing, and operation properties. However, the drastic increasing price of Au bonding wire has motivated the industry to search for alternate bonding materials for use in microelectronic packaging such as Cu and Ag bonding wires. The main benefits of using Cu bonding wire over Au bonding wire are lower material cost, higher electrical and thermal conductivity that enables smaller diameter Cu bonding wire to carry identical current as an Au bonding wire without overheating, and lower reaction rates between Cu and Al that serve to improve the reliability performance in long periods of high temperature storage conditions. However, the high hardness, easy oxidation, and complex bonding process of Cu bonding wire make it not the best alternative for Au bonding wire. Therefore, Ag bonding wire as a new alternative with potential application comes to the packaging market; it has higher thermal conductivity and lower electric resistivity in comparison with Cu bonding wire, which makes it a good candidate for power electronics, and higher elastic modulus and hardness than Au bonding wire, but lower than Cu bonding wire, which makes it easier to bond. This paper begins with a brief introduction about the developing history of bonding wires. Next, manufacturability and reliability of Au, Cu, and Ag bonding wires are introduced. Furthermore, general comparisons on basic performance and applications between the three types of bonding wires are discussed. In the end, developing trends of bonding wire are provided. Hopefully, this review can be regarded as a useful complement to other reviews on wire bonding technology and applications.

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Section: Cu Bonding Wirementioning

confidence: 99%

Research Progress on Bonding Wire for Microelectronic Packaging

et al. 2023

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“…To solve the above problems, Yuan et al developed a Cu alloy bonding wire with Cu 99.75-99.96 wt%, W 0.01-0.1 wt%, Ag 0.01-0.03 wt%, Sc 0.01-0.02 wt%, Ti 0.001-0.03 wt%, Cr 0.001-0.03 wt%, and Fe 0.001-0.02 wt%, which has outstanding oxidation resistance and corrosion resistance, excellent plasticity and ballability, high electrical conductivity and thermal conductivity, and high strength and bonding reliability that enable it to meet the requirements of electronic packaging on high performance, multifunction, miniaturization, and low cost [113]. Murali et al [114] added element of corrosion resistance to Cu to prepare a new alloyed Cu wire, which has homogeneous FAB formation and similar first and second bond bondability to bare Cu wire, and exhibits better electrochemical corrosion resistance and slower interfacial diffusion than that of bare Cu wire as well as higher bonding reliability than that of Au wire after HTST at 175 • C for 2000 h. Krimori et al revealed that Cu bonding wire with oxidation-resistant metal coating Pd presents good bondability and reliability, sufficient to replace Au bonding wire (Table 2) as well as having much lower production cost than that of Au bonding wire [115,116]. In addition, electronic flame off (EFO) current has a strong influence on Pd distribution in the FAB [117], which has an effect on Cu-Al IMCs growth and thus affects bond strength and reliability [111].…”

Section: Reliability Of Cu Bonding Wirementioning

confidence: 99%

Emerging Micro Manufacturing Technologies and Applications

2023

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“…Currently, the alternative materials with the most potential are copper-based and silver-based wires [ 7 , 8 , 9 , 10 ]. The most attention has been paid to palladium-coated copper wire [ 11 , 12 ]. Pure copper wires easily oxidize and corrode, causing reliability concerns.…”

Section: Introductionmentioning

confidence: 99%

Metallographic Mechanism of Embrittlement of 15 μm Ultrafine Quaternary Silver Alloy Bonding Wire in Chloride Ions Environment

2023

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Chloride ions contained in the sealing compound currently used in the electronic packaging industry not only interact with intermetallic compounds but also have a serious impact on silver alloy wires. A 15 μm ultrafine quaternary silver-palladium-gold-platinum alloy wire was used in this study. The wire and its bonding were immersed in a 60 °C saturated sodium chloride solution (chlorination experiment), and the strength and elongation before and after chlorination were measured. Finally, the fracture surface and cross-section characteristics were observed using a scanning electron microscope and focused ion microscope. The results revealed that chloride ions invade the wire along the grain boundary, and chlorides have been generated inside the cracks to weaken the strength and elongation of the wire. In addition, chloride ions invade the interface of the wire bonding to erode the aluminum substrate after immersing it for enough long time, causing galvanic corrosion, which in turn causes the bonding joint to separate from the aluminum substrate.

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Electromigration Effect on the Pd Coated Cu Wirebond

Cited by 7 publications

References 13 publications

Research Progress on Bonding Wire for Microelectronic Packaging

Research Progress on Bonding Wire for Microelectronic Packaging

Emerging Micro Manufacturing Technologies and Applications

Metallographic Mechanism of Embrittlement of 15 μm Ultrafine Quaternary Silver Alloy Bonding Wire in Chloride Ions Environment

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