2013 IEEE 63rd Electronic Components and Technology Conference 2013
DOI: 10.1109/ectc.2013.6575651
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Electromigration of solder balls for wafer-level packaging with different under bump metallurgy and redistribution layer thickness

Abstract: Electromigratio n (EM) has b een cond ucted on lead -free solder balls in wafer-level packages for different redistribution layer (RDL) thicknesses, under bump metallurgy (UBM) schemes, and lead-free solder alloys. Two different types of EM-induced voids were observed at the electron-source side: pancake void between the solder/RDL interface and throughthickness voids in the RDL. In both cases, voids formed at the interface of CuSn intermetallic compound and solder. A Nilayer in the UBM was found to prolong EM… Show more

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Cited by 7 publications
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References 12 publications
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