Electromigration Reliability Comparison of Cu and Al Interconnects

Alam, Syed Q.; Wei, Frank; Gan, Chee Lip; Thompson, Carl V.; Troxel, Donald E.

doi:10.1109/isqed.2005.51

Cited by 18 publications

(3 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We were able to estimate for these samples the parameters of Black's equation [7]: shows the calculation of E a = 0.84 eV (left) and n = 1.27 (right), referred to the Metal-1 downstream structures with 1-via. These values are quite close to the values reported in the literature for PLR tests (13,14), suggesting that the flow of dislocated ions is mainly located at the upper interface, between copper and the silicon nitride cap. Downstream and upstream structures are quite different from the EM point-of-view (Figure 5, left): in fact, for the downstream structures, the local maximum of the current density is found at the upper cap-layer interface, where the EM transport is more efficient.…”

Section: Isot Resultssupporting

confidence: 89%

Electromigration Reliability Assessment of Cu-based Metallization Systems by a Wafer-Level Approach

et al. 2007

View full text Add to dashboard Cite

Recently, a fast improved isothermal method (ISOT) has been devised to characterize the electromigration (EM) wafer level reliability (WLR). In this paper, the usefulness of ISOT will be shown, not only for the aim of process monitoring in production, but also, when the method is applied carefully, to complement and, in perspective, to substitute the expensive standard package-level reliability (PLR) tests, currently used to assess the EM reliability. The complete methodological approach is described, as well as precautions to control the stress conditions and normalization procedures to account for the process parameter spread. Some results on double-damascene 90 nm Cu technology are shown.

show abstract

Section: Isot Resultssupporting

confidence: 89%

Electromigration Reliability Assessment of Cu-based Metallization Systems by a Wafer-Level Approach

et al. 2007

View full text Add to dashboard Cite

show abstract

“…The feedback flow is injected into the negative cycle in the residual network, then the forward (backward) edges in push (return) flow; thus, the negative cycle is then removed. Removing the negative cycle results in an area reduction (16) Except the edges on the negative cycle, flows on other edges remain the same. Hence, the updated area , which contradicts to that is optimal.…”

Section: Appendixmentioning

confidence: 99%

WiT: Optimal Wiring Topology for Electromigration Avoidance

Jiang

Chang

2012

IEEE Trans. VLSI Syst.

View full text Add to dashboard Cite

Abstract-Due to excessive current densities, electromigration (EM) may trigger a permanent open-or short-circuit failure in signal wires or power networks in analog or mixed-signal circuits. As the feature size keeps shrinking, this effect becomes a key reliability concern. Hence, in this paper, we focus on wiring topology generation for avoiding EM at the routing stage. Prior works tended towards heuristics; on the contrary, we first claim this problem belongs to class P instead of class NP-hard. Our breakthrough is, via the proof of the greedy-choice property, we successfully model this problem on a multi-source multi-sink flow network and then solve it by a strongly polynomial time algorithm. Experimental results prove the effectiveness and efficiency of our algorithm.

show abstract

“…Copper (Cu) has been widely used in LSI applications as the interconnection material in place of the conventional Aluminum (Al) metallization. [1][2][3][4][5][6][7] Owing to the continuing scale-down of the interconnect dimension, Cu overcomes with its higher electrical and thermal conductivities and also able to enhance the electro-migration reliability. [8][9][10][11] However, it is well known that Cu oxides due to moisture that is easily formed on the Cu surface.…”

Section: Introductionmentioning

confidence: 99%

Nitrogen-doped amorphous carbon coating on copper pads for direct wire bonding with a long-term humidity reliability

Gomasang

Nakajima

Ueno

2021

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

To improve the long-term reliability of copper (Cu) pads used in LSIs, nitrogen-doped amorphous carbon (a-C:N) coating is applied to the Cu pads with direct wire-bonding to prevent Cu oxidation in humidity. To obtain a thin barrier, the thickness optimization of a-C:N layer was carried out under temperature humidity storage (THS) testing at the conditions of 85 °C/85% relative humidity. Cu pad chains coated with the optimized a-C:N film were fabricated by direct bonding with aluminum (Al) wires. The electrical connection up to 210 bonds was obtained with the 10 and 15 nm thick a-C:N coated Cu pads. The reliability test of the pad-chains under the THS was carried out, and a 15 nm thick a-C:N can preserve the electrical connection along 100 h of the THS test. The a-C:N coating is expected to improve the humidity reliability of Cu pads with direct wire-bonding for long-term data storage.

show abstract

Electromigration Reliability Comparison of Cu and Al Interconnects

Abstract: Abstract

Cited by 18 publications

References 15 publications

Electromigration Reliability Assessment of Cu-based Metallization Systems by a Wafer-Level Approach

Electromigration Reliability Assessment of Cu-based Metallization Systems by a Wafer-Level Approach

WiT: Optimal Wiring Topology for Electromigration Avoidance

Nitrogen-doped amorphous carbon coating on copper pads for direct wire bonding with a long-term humidity reliability

Contact Info

Product

Resources

About