33rd Design Automation Conference Proceedings, 1996
DOI: 10.1109/dac.1996.545600
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Electromigration reliability enhancement via bus activity distribution

Abstract: Electromigration induced d e gradation in integrated circuits has been accelerated b y c ontinuous scaling of device dimensions. We present a methodology for synthesizing high-reliability and low-energy microarchitectures at the RT level by judiciously binding and scheduling the data transfers of a control data ow graph(CDFG) representation of the application onto the buses in the microarchitecture. The proposed method a c c ounts for correlations between data transfers and the constraints on the number of bus… Show more

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Cited by 12 publications
(3 citation statements)
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“…The physical design aspect of EM has been extensively researched. Numerous studies [7,10,21] have analyzed the impact of EM on various types of interconnect materials in various processes, temperatures, and voltage conditions. The prevailing physical solution is to increase the width of the wires, which, as shown in Equation ( 2), extends MTF and ultimately mitigates EM effects.…”
Section: Prior Work On Electromigrationmentioning
confidence: 99%
See 1 more Smart Citation
“…The physical design aspect of EM has been extensively researched. Numerous studies [7,10,21] have analyzed the impact of EM on various types of interconnect materials in various processes, temperatures, and voltage conditions. The prevailing physical solution is to increase the width of the wires, which, as shown in Equation ( 2), extends MTF and ultimately mitigates EM effects.…”
Section: Prior Work On Electromigrationmentioning
confidence: 99%
“…Until now, the emphasis in common IS design flows has been on improving the implementation and design flow of ICs [1,2,[7][8][9][10][11][12][13] to address EM-related issues, with few studies proposing microarchitectural solutions. In this work, we offer a new microarchitecture that enhances the reliability of the memory hierarchy in modern microprocessors by reducing the impact of RMS-EM and simplifying their design efforts while offering a significant lifetime extension.…”
Section: Introductionmentioning
confidence: 99%
“…J tends to be much higher than J crit in interconnects (nearly 2 orders of magnitude [27]). Hence, J − J crit ≈ J. J for an interconnect can be related to the switching probability of the line p [28]:…”
Section: Lifetime Reliability Modelmentioning
confidence: 99%