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Moeckly, B. H.; Lathrop, D. K.; Buhrman, R. A.

doi:10.1103/physrevb.47.400

Cited by 222 publications

(113 citation statements)

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“…Recall that under plastic deformation, grain boundaries (GBs) (which are the natural sources of weak links in HTS), move rather rapidly via the movement of the grain boundary dislocations (GBDs) comprising these GBs. At the same time, observed [1,3,9,10,11] in HTS single crystals regular 2D dislocation networks of oxygen depleted regions (generated by the …”

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confidence: 96%

Influence of chemical pressure effects on nonlinear thermal conductivity of intrinsically granular superconductors

Sergeenkov¹

2007

Journal of Applied Physics

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Using a 2D model of capacitively coupled Josephson junction arrays (created by a network of twin boundary dislocations with strain fields acting as an insulating barrier between hole-rich domains in underdoped crystals), we study the influence of chemical pressure (∇µ) on nonlinear (i.e., ∇T -dependent) thermal conductivity (NLTC) of an intrinsically granular superconductor.Quite a substantial enhancement of NLTC is predicted when intrinsic chemoelectric field E µ ∝ ∇µ closely matches the externally produced thermoelectric field E T ∝ ∇T . The estimates of the model parameters suggest a realistic possibility to experimentally monitor this effect in non-stoichiometric high-T C superconductors. background. In particular, it was found that at low levels of hole doping (δ < 0.2), the

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confidence: 96%

Influence of chemical pressure effects on nonlinear thermal conductivity of intrinsically granular superconductors

Sergeenkov¹

2007

Journal of Applied Physics

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“…Observation of high-T c superconductivity suppression and restoration near the Ag/YBCO interface during the RS effect at temperatures below T c , supports this scenario as the variation of oxygen content modifies electrical properties of the near-interface YBCO layer from insulating to superconducting. 14,17,21 Generally, both the resistivity ρ and activation energy E A depend on the oxygen content as well as on the direction inside the YBCO crystal. Typical value of the ρ c /ρ ab ratio is about 10 ÷ 100 depending on oxygen content where ρ ab is the resistivity in the in-plane (abplane) direction and ρ c in the out-of-plane (c-axis) direction 19 .…”

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confidence: 99%

Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites

Pleceník

Tomášek

Belogolovskii

et al. 2012

Journal of Applied Physics

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Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented YBa 2 Cu 3 O 6+c (YBCO) thin films with different crystallographic orientations have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii) both were designed and fabricated, and their current-voltage characteristics have been measured. The type (i) junctions exhibited conventional bipolar resistance switching behavior, whereas in other two types the low-resistance state was unsteady and their resistance quickly relaxed to the initial high-resistance state. Physical mechanism based on the oxygen diffusion scenario, explaining such behavior, is discussed.The resistive switching (RS) effect observed in capacitor-like metal/insulator/metal junctions belongs to the most promising candidates for the next generation of the memory cell technology based on a sudden change of the junction resistance caused by an electric field applied to the metal electrodes. Despite a burst of activities triggered by increasing technological interest for this phenomenon 1,2 , details of its physical mechanism are still debated. The most studied are highly insulating binary transition metal oxides, where a key ingredient of the RS effect is believed to be a redistribution of oxygen ion vacancies which results in the formation (low-resistive state -LRS) and rupture (high-resistive state -HRS) of conductive filaments within the insulating media. 1,2 For more complex oxides like perovskites, the process of the RS effect seems to be more complicated. In this case the switching was usually bipolar whereas in simple binary oxides bi-and unipolar behavior has been observed. [3][4][5] In the following we are studying the RS effect in contacts based on conducting YBa 2 Cu 3 O 6+c (YBCO) films, compounds with a crystal structure which promotes electronic transport primarily within a twodimensional layer of atoms. One of the ways to shed light on their basic properties is to study an electricfield effect in the normal state. Up to now, two mutually exclusive field-effect mechanisms have been proposed. The first one, fundamentally electronic, is based on a conventional approach which takes into account the Coulomb interaction of an applied electric field with mobile current carriers. 6 It is fast, symmetric with respect to the bias polarity and results in the enhancement or depletion of the number of charge carriers within a few near-surface atomic layers. 6 The second mechanism 7 is related to direct interaction of oxygen ions with an applied electric field which causes significant charge carrier rearrangement due to a comparatively small oxygen migration energy and high density of vacancies in the oxygen sub-lattice in an optimal doping state. Such a process is characterized by a slower time constant and can be unequal in magnitude at positive and negative voltage biases of identical absolute value. 7 To choose between the two mechanisms of field-induced changes in normal-state...

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“…Rough numerical estimates give β = .37 and simple theoretical arguments give β = 1/3. Our conclusion that small driving forces can significantly enhance coarsening may be relevant to the YB 2 Cu 3 O 7−δ electromigration experiments of Moeckly et al [13]. …”

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confidence: 80%

“…Such bulk diffusion was relevant to the electromigration studies of Moeckly, Lathrop, and Buhrman [13]. In their room temperature observations of YB 2 Cu 3 O 7−δ thin film devices, they found that a small electric bias (∼ 10 3 V /cm) could produce macroscopic motion of oxygen.…”

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confidence: 99%

Fast domain growth through density-dependent diffusion in a driven lattice gas

Wickham

Sethna

1995

Phys. Rev. B

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We study electromigration in a driven diffusive lattice gas (DDLG) whose continuous Monte Carlo dynamics generate higher particle mobility in areas with lower particle density. At low vacancy concentrations and low temperatures, vacancy domains tend to be faceted: the external driving force causes large domains to move much more quickly than small ones, producing exponential domain growth. At higher vacancy concentrations and temperatures, even small domains have rough boundaries: velocity differences between domains are smaller, and modest simulation times produce an average domain length scale which roughly follows L ∼ t ζ , where ζ varies from roughly .55 at 50% filling to roughly .75 at 70% filling. This growth is faster than the t 1/3 behavior of a standard conserved order parameter Ising model. Some runs may be approaching a scaling regime. A simple scaling picture which neglects velocity fluctuations, but includes the cluster size dependence of the velocity, predicts growth with L ∼ t 1/2 . At low fields and early times, fast growth is delayed until the characteristic domain size reaches a crossover length which follows L cross ∝ E −β . Rough numerical estimates give β = .37 and simple theoretical arguments give β = 1/3. Our conclusion that small driving forces can significantly enhance coarsening may be relevant to the YB 2 Cu 3 O 7−δ electromigration experiments of Moeckly et al. [13].

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Electromigration study of oxygen disorder and grain-boundary effects inYBa2Cu3

Cited by 222 publications

References 50 publications

Influence of chemical pressure effects on nonlinear thermal conductivity of intrinsically granular superconductors

Influence of chemical pressure effects on nonlinear thermal conductivity of intrinsically granular superconductors

Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites

Fast domain growth through density-dependent diffusion in a driven lattice gas

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