Electron Accumulation in InN Thin Films and Nanowires

Arslan, Leyla Çolakerol; Smith, Kevin

doi:10.1007/978-3-319-25340-4_13

Cited by 1 publication

(2 citation statements)

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“…This leads to an unintentional surface n-type doping modulated by the morphology. 30,32,33 In this study, we evaluate the effect of the surface-to-volume ratio on the electron accumulation at the surface of wurtzite InN nanostructures at the early stage of growth on the (0002) GaN/sapphire substrate. We show that along with the donortype surface states the surface-to-volume ratio and consequently the electron transfer from the bulk to the surface have a major impact on the accumulated electron density in InN nanostructures.…”

Section: ■ Introductionmentioning

confidence: 99%

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Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics

Oliveira

Kuchuk

Lytvyn

et al. 2023

ACS Appl. Nano Mater.

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The existence of an uncontrolled electron accumulation layer near the surface of InN thin films is an obstacle for the development of reliable InN-based devices for use in narrowbandgap optoelectronics. In this article, we show that this can be regulated by modulating the surface of the InN grown on GaN(001). By increasing the surface-to-volume ratio, we can demonstrate a reduction in the surface carrier concentration from ∼10 18 to ∼10 17 cm −3 . These controlled changes are despite the idea that donor-type surface states, which contribute to conduction band electrons are reported to be the main origin of the surface charge density. Additionally, by evaluating the surface carrier concentration through modeling of photoluminescence (PL) spectroscopy, we have found a failure of the Burstein−Moss theory. Conversely, modeling of the longitudinal optical phonon−plasmon coupled modes measured using Raman spectroscopy, simulations of InN structures using the k•p method, and Hall effect measurements, where possible, showed an excellent correlation of the surface electron concentrations. The large inhomogeneous broadening in the PL, which overwhelms any broadening due to the Burstein−Moss effect, is understood to be the result of varying Stark shifts due to varying strain throughout high surface-to-volume nanostructures, which dramatically affects the spatially indirect nature of the electron−hole recombination. Finally, our findings demonstrate how the electron population of 2D and 3D InN nanostructures can be tuned by structural features, such as porosity and/or the surface-to-volume ratio.

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Section: ■ Introductionmentioning

confidence: 99%

“…Beyond this band bending there exists a wide flat band region, where the bulk electron density is reported to differ by a few orders of magnitude from its value at the surface. This leads to an unintentional surface n -type doping modulated by the morphology. ,, …”

Section: Introductionmentioning

confidence: 99%