Electron and hole drift mobility in amorphous silicon

Abstract

Electron and hole drift mobility have been measured in n- and p-type amorphous Si Schottky-barrier solar cells. At room temperature μdn= (2–5) ×10−2 cm2/V sec and μdp= (5–6) ×10−4 cm2/V sec. Both mobilities are trap controlled with ΔE=0.19 eV for electrons and ΔE=0.35 eV for holes above 250 °K and ΔE=0.16 and 0.26 eV, respectively, below 250 °K. Majority-carrier lifetimes are estimated to be 1 μsec for electrons and 25 μsec for holes.

Sub Ten Micron Channel Devices Achieved by Vertical Organic Thin Film Transistor

“…Mobility of pentacene (based OTFT) is comparable to amorphous silicon. The room temperature drift mobilities are found to range from 0.0005 to 0.0006 cm 2 /Vsec for holes in the p-type material [3] which is comparable with the mobility which we get in pentacene based top contact OTFT. 2.…”

“…The processing of top contact OTFT is low cost and does not require sophisticated tools, which are required in the Si based TFT processing steps. 3. As we can see from table 1 that substrate material for OTFT is paper and that's why it is Compatible with flexible technology.…”

Novel silicon phases and nanostructures for solar energy conversion

“…However, the computed values of the mobility l are better than those of SnS 39 and comparable to those of Cu 2 O, 40 which are promising semiconductors for photovoltaic applications. Importantly, we found that the l of K 8 Al 8 Si 38 is much superior to those of, e.g., a-Si: 1 cm 2 V À1 s À1 for electrons and 0.01 cm 2 V À1 s À1 for holes [41][42][43][44] and to those of organic materials: $0.008 cm 2 V À1 s À1 for electrons and $0.002 for holes. 45 In addition, the ratio l e =l h is $5 in K 8 Al 8 Si 38 , while it can be as high as 100 in a-Si (it is $3 in c-Si).…”

Preparation and properties of heavily doped and strongly compensated Ge films on GaAs

“…The exponential increase in mobility with the temperature is a well known fact for amorphous semiconductors. 5,43,44 This behavior is explained for amorphous semiconductors in terms of free charge carrier trapping by the localized states near the conduction band edge.…”