Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

“…The electric field above which the electron velocity is saturating is given by E sat ¼ v sat =l. 4 The effective mass of electrons and holes is approximately equal in graphene, such that similar values of a for as-grown and H-intercalated material are expected. 20 The temperature dependent velocity-field data are fitted to Eq.…”

“…Short pulses are used in order to minimize resistive self heating effects, which may interfere with a proper interpretation of the temperature dependence. This method has been applied to measurements on silicon, 4 silicon carbide, 5 and other materials. Additionally, a capacitive probe method has been used in order to obtain the velocity-field characteristic in semiconductor materials.…”

Transient avalanche oscillation of IGBTs under high current

“…The PETT and BARITT mechanism shows the damping eect as long as the the frequencies are low [Sil14]. The drift velocity of electrons and holes (υ dn , υ dp ) can be derived on the basis of the measurement of electron and hole drift velocity in Silicon [CMMO75].…”

Estudo da região de sublimiar de transistores SOI avançados.

“…High-field Saturation -Modelo que considera a velocidade de saturação dos portadores devido ao elevado campo elétrico, baseado no modelo proposto por Canali et al (Canali, Majni, Minder, & Ottaviani, 1975). …”