Electron and hole mobilities in silicon as a function of concentration and temperature

Arora, Neha; Hauser, John R.; Roulston, D.J.

doi:10.1109/t-ed.1982.20698

Cited by 875 publications

(344 citation statements)

References 8 publications

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“…27 We found that the electron and hole mobilities of the type-I clathrate K 8 Al 8 Si 38 , as shown in Fig. 5, are smaller than those of diamond Si [36][37][38] by a factor of 6-10 at room temperature. The lower values of the mobilities are partly due to the small amount of disorder present in the cages.…”

Section: A Clathratesmentioning

confidence: 77%

Novel silicon phases and nanostructures for solar energy conversion

Wippermann

Vörös

et al. 2016

Applied Physics Reviews

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Silicon exhibits a large variety of different bulk phases, allotropes, and composite structures, such as, e.g., clathrates or nanostructures, at both higher and lower densities compared with diamond-like Si-I. New Si structures continue to be discovered. These novel forms of Si offer exciting prospects to create Si based materials, which are non-toxic and earth-abundant, with properties tailored precisely towards specific applications. We illustrate how such novel Si based materials either in the bulk or as nanostructures may be used to significantly improve the efficiency of solar energy conversion devices.

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Section: A Clathratesmentioning

confidence: 77%

Novel silicon phases and nanostructures for solar energy conversion

Wippermann

Vörös

et al. 2016

Applied Physics Reviews

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“…To achieve lowtemperature operation, we assume degenerate doping, and therefore a low mobility is to be expected. We have used a value of 100cm 2 /(V · s) [134] for both electron and hole mobilities. Because this value will be limited by ionized impurity scattering, it is likely to change little as the temperature is decreased to 1 K.…”

Section: Appendix C: Integration Time and Refractory Periodmentioning

confidence: 99%

Superconducting Optoelectronic Circuits for Neuromorphic Computing

et al. 2017

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Neural networks have proven effective for solving many difficult computational problems. Implementing complex neural networks in software is very computationally expensive. To explore the limits of information processing, it will be necessary to implement new hardware platforms with large numbers of neurons, each with a large number of connections to other neurons. Here we propose a hybrid semiconductor-superconductor hardware platform for the implementation of neural networks and large-scale neuromorphic computing. The platform combines semiconducting few-photon light-emitting diodes with superconducting-nanowire single-photon detectors to behave as spiking neurons. These processing units are connected via a network of optical waveguides, and variable weights of connection can be implemented using several approaches. The use of light as a signaling mechanism overcomes fanout and parasitic constraints on electrical signals while simultaneously introducing physical degrees of freedom which can be employed for computation. The use of supercurrents achieves the low power density necessary to scale to systems with enormous entropy. The proposed processing units can operate at speeds of at least 20 MHz with fully asynchronous activity, light-speed-limited latency, and power densities on the order of 1 mW/cm 2 for neurons with 700 connections operating at full speed at 2 K. The processing units achieve an energy efficiency of ≈ 20 aJ per synapse event. By leveraging multilayer photonics with deposited waveguides and superconductors with feature sizes > 100 nm, this approach could scale to systems with massive interconnectivity and complexity for advanced computing as well as explorations of information processing capacity in systems with an enormous number of information-bearing microstates.

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“…We used the Arora mobility model 20 . Both mobilities decrease with temperature leading to an increase in resistivity and increased heat dissipation.…”

Section: Figmentioning

confidence: 99%

Heat Transfer Modeling in Integrated Photoelectrochemical Hydrogen Generators Using Concentrated Irradiation

Tembhurne¹,

Dumortier²,

Haussener

2014

Proceedings of the 15th International Heat Transfer Conference

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The direct conversion of solar energy and water into a storable fuel via integrated photoelectrochemical (PEC) devices is investigated. Particularly, the proposed device uses concentrated solar irradiation in order to minimize the amount of rare and expensive components such as light absorbers and catalysts. Consequently, heat management becomes crucial for device performance. We present a 2D coupled multi-physics model using finite element and finite volume methods to predict the performance of the integrated PEC device. The model accounts for charge generation and transport in the triple junction solar cell and the components of the integrated electrolyzer (polymeric electrolyte and solid electrode), electrochemical reaction at the catalytic sites, fluid flow and species transport in the channels delivering the reactant (water) and removing the products (hydrogen and oxygen), and radiation absorption and heat transfer in all components. The model developed shows to be a valuable design and optimization tool for integrated PEC devices working with concentrated irradiation and at elevated temperatures.

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Electron and hole mobilities in silicon as a function of concentration and temperature

Cited by 875 publications

References 8 publications

Novel silicon phases and nanostructures for solar energy conversion

Novel silicon phases and nanostructures for solar energy conversion

Superconducting Optoelectronic Circuits for Neuromorphic Computing

Heat Transfer Modeling in Integrated Photoelectrochemical Hydrogen Generators Using Concentrated Irradiation

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