Electron and hole spectra and selection rules for optical transitions in Ge1−x Six/Ge heterostructures

Aleshkin, V. Ya.; Bekin, N. A.

doi:10.1134/1.1187094

“…The radiative relaxation time in a SiGe quantum well is about tens of nanoseconds [279] compared to hundreds of microseconds in silicon [282,1066,1067]. Moreover the presence of germanium and stress also enhances the spin-orbit coupling and raises the circular polarization of the emitted light from the recombination of the spin polarized electrons with holes [1068][1069][1070]. These factors improve the efficiency of the electroluminescence.…”

Section: Spin Transport In Siliconmentioning

confidence: 97%

Spin dynamics in semiconductors

Wu

¹

,

Jiang

²

,

Weng

³

2010

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This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports

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“…The radiative relaxation time in SiGe quantum well is about tens of nanoseconds [279] compared to hundreds of microseconds in silicon [282,1067,1068]. Moreover the presence of germanium and stress also enhances the spin-orbit coupling and raises the circular polarization of the emitted light from the recombination of the spin polarized electrons with holes [1069][1070][1071]. These factors improve the efficiency of the electroluminescence.…”

Section: Spin Transport In Siliconmentioning

confidence: 99%

Spin dynamics in semiconductors

Wu,

Jiang,

Weng

2010

Preprint

View full text Add to dashboard Cite

This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.

show abstract