Electron and hole traps in N-doped ZnO grown on p-type Si by metalorganic chemical vapor deposition

Fang, Zhijia; Claflin, B.; Kerr, Lei L.; Li, Xiaonan

doi:10.1063/1.2759181

Cited by 27 publications

(7 citation statements)

References 20 publications

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“…The energy of the valence 2p states and the electronegativity of nitrogen are also the closest to those of the oxygen atom, particularly when compared with other column-V dopants [59]. Several groups have reported on the incorporation of N in ZnO, and many have claimed that N substitutes for O [60,62,69,180,[232][233][234][235][236][237]; however, the reports on p-type conductivity in N-doped ZnO still remain controversial.…”

Section: Nitrogenmentioning

confidence: 99%

Fundamentals of zinc oxide as a semiconductor

2009

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In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate for GaN and related alloys, the availability of high-quality large bulk single crystals, the strong luminescence demonstrated in optically pumped lasers and the prospects of gaining control over its electrical conductivity have led a large number of groups to turn their research for electronic and photonic devices to ZnO in its own right. The high electron mobility, high thermal conductivity, wide and direct band gap and large exciton binding energy make ZnO suitable for a wide range of devices, including transparent thin-film transistors, photodetectors, light-emitting diodes and laser diodes that operate in the blue and ultraviolet region of the spectrum. In spite of the recent rapid developments, controlling the electrical conductivity of ZnO has remained a major challenge. While a number of research groups have reported achieving p-type ZnO, there are still problems concerning the reproducibility of the results and the stability of the p-type conductivity. Even the cause of the commonly observed unintentional n-type conductivity in as-grown ZnO is still under debate. One approach to address these issues consists of growing high-quality single crystalline bulk and thin films in which the concentrations of impurities and intrinsic defects are controlled. In this review we discuss the status of ZnO as a semiconductor. We first discuss the growth of bulk and epitaxial films, growth conditions and their influence on the incorporation of native defects and impurities. We then present the theory of doping and native defects in ZnO based on density-functional calculations, discussing the stability and electronic structure of native point defects and impurities and their influence on the electrical conductivity and optical properties of ZnO. We pay special attention to the possible causes of the unintentional n-type conductivity, emphasize the role of impurities, critically review the current status of p-type doping and address possible routes to controlling the electrical conductivity in ZnO. Finally, we discuss band-gap engineering using MgZnO and CdZnO alloys.

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Section: Nitrogenmentioning

confidence: 99%

Fundamentals of zinc oxide as a semiconductor

2009

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“…The p-type doping is difficult to achieve in ZnO [89] due to the existence of background n-type dopants including H impurities [90], O vacancies [91] and Zn interstitials [92]. Despite the difficulties in obtaining bulk p-type ZnO, several laboratories have demonstrated thin film p-type ZnO using group V (N [93], P [94], As [95], and Sb [96]) and group I (Li [97]) elements. Co-doping with two potential acceptors (N and As) [98] or acceptor and donor (N and Al) [99] have also been studied.…”

Section: -Carrier Mobility In Bulk Znomentioning

confidence: 99%

Electron mobility in oxide heterostructures

Trier

Christensen²,

Pryds³

2018

J. Phys. D: Appl. Phys.

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“…Up to now a number of electron traps with binding energies ranging from 10 meV to 1000 meV below the conduction band edge were observed by capacitance spectroscopic methods 8–12. Also some hole traps with energy levels from 150 meV up to 900 meV above the valence band edge have been reported and were mostly observed by Deep Level Transient Spectroscopy (DLTS) using p + n junctions for hole injection 4, 13. Despite these recent reports there is still few knowledge about states close to the valence band and especially the midgap of ZnO.…”

Section: Introductionmentioning

confidence: 99%

Defects in a nitrogen‐implanted ZnO thin film

Schmidt

Ellguth

Schmidt

et al. 2010

Physica Status Solidi (b)

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Defects in a nitrogen implanted and thermally annealed zinc oxide thin film (n-type conducting) and reference samples were studied. Space charge regions realised by fabrication of semitransparent palladium Schottky contacts enabled the application of capacitance spectroscopic methods and photocurrent measurements. We report on the formation of a deep level, in the following labelled TN1. It is 580 meV below the conduction band edge, probably related to nitrogen, and must be distinguished from the well known intrinsic deep level E4 at almost equal energetical depth. Capacitance measurements in combination with optical excitation, conducted at different temperatures, as well as photo-current measurements revealed the existence of two states approximately 60 meV and 100 meV above the valence band edge for the nitrogen implanted sample. These states cause an acceptor compensation degree larger than 0.9. The thermal emission of holes from these states into the valence band was observed by optical deep level transient spectroscopy.

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Electron and hole traps in N-doped ZnO grown on p-type Si by metalorganic chemical vapor deposition

Cited by 27 publications

References 20 publications

Fundamentals of zinc oxide as a semiconductor

Fundamentals of zinc oxide as a semiconductor

Electron mobility in oxide heterostructures

Defects in a nitrogen‐implanted ZnO thin film

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