Electron and Proton Irradiation of Silicon

Larsen, A. Nylandsted; Mesli, A.

doi:10.1016/bs.semsem.2015.03.001

Cited by 6 publications

(1 citation statement)

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“…4d inset) and a visible peak at 155 K next to a broad bump from 200 to 300 K are observed, indicating that carbon from the dopant-carrying molecules can diffuse into the substrate and produce some defects in phosphorus-doped Si. These defects could be related to C, H, O, and N. Oxygen plays a significant role only in the presence of lattice defects such as vacancies 28 which do not exist in the doping process considered in this work. Defects involving hydrogen are very unlikely as they do not exist after the high temperature treatments during which hydrogen out diffuses 29 .…”

Section: Resultsmentioning

confidence: 99%

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers

et al. 2018

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It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

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Section: Resultsmentioning

confidence: 99%

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers

et al. 2018

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Effect of proton irradiation induced localized defect clusters on recovery time and leakage current in silicon photoconductive semiconductor switches

Bhamidipati,

Bhattarai,

Caruso

2023

AIP Advances

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Pulse recovery time in semiconducting devices depends strongly on minority carrier lifetime, bandgap-type-dependent recombination, impurity concentration, and subband placement. In indirect bandgap solids, such as silicon, it is dominated by Shockley–Reed–Hall (SRH) recombination via trap-based recombination centers yielding slow recombination. The sluggish recombination then limits the pulse repetition rate and consequently the average power to a load. For decades, fabrication and irradiation techniques, such as Au- and Pt-diffusion, and energized electron-, proton-, and alpha particle-beam bombardment have been used to adjust minority carrier lifetime in silicon. These techniques generate shallow- and/or deep-level lattice defects to promote/retard trap-assisted SRH recombination. Despite investigating the characteristics of the generated defects on target material, the prior-art falls short in comprehensively addressing their effects on device-level architecture, specifically photoconductive switching devices. In this work, the effect of proton irradiation-induced localized crystal defect clusters on minority carrier lifetime in silicon photoconductive semiconductor switches is investigated when bombarded with 2.5–5 MeV beam energies with fluences between 9 × 1012–11 × 1013 cm−2 at room temperature. Photo-illuminated recovery characteristics for proton-beam (p-beam) irradiated device models with three distinct defect profiles have been studied using Silvaco TCAD and results have been compared with the electron-beam (e-beam) irradiation model with three different distinct defect profiles. At 30× lower defect density, recovery time trends in the p-beam irradiated device model were seen to be on the same order of magnitude as the e-beam irradiated model. At similar defect densities (1 × 1016 cm−3), the profile with a uniformly distributed bulk defect profile performed 10× better from a recovery time viewpoint compared with the e-beam irradiation. Furthermore, three orders of magnitude reduction in leakage currents were noticed in p-beam irradiated models.

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Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers

Kozlovski

Lebedev²,

Strel'chuk³

et al. 2017

Semiconductors

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Electron and Proton Irradiation of Silicon

Cited by 6 publications

References 84 publications

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers

Effect of proton irradiation induced localized defect clusters on recovery time and leakage current in silicon photoconductive semiconductor switches

Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers

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