Electron-beam CARL resist development for 70 nm direct write

Abstract

Articles you may be interested inComparative evaluation of electron-beam sensitive single layer top surface imaging and bilayer chemical amplification of resist lines process for stencil mask making Negative electron-beam nanofabrication resist using acid-catalyzed protection of polyphenol provided by phenylcarbinol J.Accurate critical dimension control by using an azide/novolak resist process for electron-beam lithography Because of the need of 70 nm structures in the near future, electron-beam ͑e-beam͒ lithography as a means for high resolution lithography is discussed mostly for mask or ASIC fabrication but also for the application in standard lithography. Besides the improvement of new e-beam writing concepts including software and hardware enhancement, the development of new resists and processes is a main objective for a high throughput production. To understand the principal reactions that occur during the patterning process we decided to carry out basic examinations based on chemical amplification of resist lines ͑CARL͒ ͓W.-D. Domke et al., Microlithogr. World 42, 2 ͑1999͔͒ resist materials. The first step was to look at the interaction between the polymer and e-beam. Polymers consisting of chemically identical monomers were synthesized in different molecular ratios and processed as resists without other additives. Detailed investigations of the resists included e-beam patterning with a JEOL JSM-840A/nanobeam pattern generator. The next step was to examine the CAR reaction, i.e., the interaction of the polymer/photoacid generator matrix with the e-beam electrons. Perfluorinated alkysulfonates as PAGs were focused. These compounds generate very strong acids through irradiation. They can be compared, e.g., by their different acid strength, different vapor pressure of the resulting acid, and by their different molecular size. These parameters strongly affect the acid diffusion and consequently the resist resolution as far as the line edge roughness. Within this current article the first complete resist mixtures have been evaluated under process conditions.

Effect of Post Exposure Bake in Inorganic Electron Beam Resist and Utilizing for Nanoimprint Mold

“…9 But, in this study NIMO-P0701 is not CAR resist. In this case, PEB changes the wetting ability of resist surface.…”