Electron beam deposition of ceramic coatings at fore-vacuum pressure

Tyunkov, A.V.; Yushkov, Yu. G.; Zolotukhin, Denis B.; Окс, Е. М.

doi:10.1063/1.4964561

Cited by 3 publications

(2 citation statements)

References 19 publications

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“…This method is technologically simple, provides rather high coating growth rates (up to several micrometers per minute), and allows a wide range of process parameters [22]. In this method the material is bombarded and heated by an electron beam.…”

Section: Electron Beam Evaporationmentioning

confidence: 99%

Thin Film Deposition and Characterization Techniques

Geremew

2022

J3DPA

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Thin films are everywhere in the modern world, with many of the technologies we depend upon in daily life being, in turn, dependent upon thin film technology. Chemical bath deposition includes principles of chemical bath deposition (CBD) and concept of solubility product, nucleation and film growth, thin film deposition mechanism in chemical bath deposition. The non-metallic ion source (anions) and metal ion source (cations) then react to form the compound. The nucleation process plays an important role in determining the crystallinity and microstructure of the resultant film. From the discussion of deposition techniques which are physical and chemical deposition methods. Physical deposition techniques contains sputtering deposition, electron beam evaporation and physical vapour deposition (PVD) process have been known for over 100 years and also fabrication films on the substrate, as well as the increasement of the pressure in the chamber due to operation of the sources indicates directly that gases or vapors are desorbed. Chemical deposition process is economically effective and has been industrially exploited to large scale. It can be summarized that thin film characterization techniques include X-ray diffraction (XRD), UV-Vis spectrophotometer, scanning electron microscopy, energy dispersive x-ray diffraction, transmission electron microscopy (TEM). X-rays diffraction (XRD) is a rapid and a powerful technique used to study the phase of a crystalline material, information on unit cell lattice parameters, crystal structure, crystal orientation and crystalline size.

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Section: Electron Beam Evaporationmentioning

confidence: 99%

Thin Film Deposition and Characterization Techniques

Geremew

2022

J3DPA

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“…[ 12 ] However, with boron, the electron‐beam approach is hampered by the low electrical conductivity of boron, which in vacuum results in charging up of the target and even reflection of the electron beam. However, as we have shown in prior works, [ 13,14 ] dense boron‐containing plasma can be generated and used for coating deposition by electron‐beam evaporation of a boron‐containing target in medium vacuum (at pressure about 10 Pa) by a powerful continuous focused electron beam from a forevacuum pressure plasma‐cathode electron source. In the forevacuum pressure range, efficient heating and high evaporation rates of low conductivity targets can be attained via neutralization of target surface charging by ions of the plasma formed from the working gas by the electron beam in the vicinity of the target (the “beam plasma”).…”

Section: Introductionmentioning

confidence: 99%

Ion composition of a multicomponent beam plasma formed by electron‐beam evaporation of a boron‐containing target in medium vacuum

Yushkov

Окс

Tyunkov

et al. 2020

Plasma Processes & Polymers

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Thin boron and boron nitride films are applied in microelectronics due to their high hardness and strength, and low electrical conductivity. However, methods for fabrication of such films are limited. One promising method is electron‐beam evaporation of a boron‐containing target to form a boron‐containing plasma. In this study, we describe our investigations of the ion mass‐to‐charge composition of the multicomponent plasma generated by heating and evaporation of boron or boron nitride targets by a continuous electron beam in a helium or nitrogen atmosphere at medium vacuum pressure (about 10 Pa). We show that at beam power sufficient for intense evaporation of the boron target, there is an increase in the mass fraction of boron ions in the plasma. For the case of evaporation of a boron nitride target, the deposited coating contains both boron and nitrogen, implying incomplete dissociation of boron nitride molecules in the evaporation process. The results of our study demonstrate the utility of electron‐beam evaporation of high melting point binary compounds in medium vacuum for coating deposition.

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