Electron‐beam incident‐angle‐ resolved cathodoluminescence studies on bulk ZnO crystals

Onuma, Takeyoshi; Yamaguchi, Tomohiro; Honda, Toshio

doi:10.1002/pssc.201200598

Cited by 6 publications

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Details of the CL setup can be found elsewhere. 17 As shown in Fig. 2, the optical transmittance spectra at room temperature exhibited distinct shoulders at 4.6-4.7 eV for the (001) undoped and (100) Si-doped substrates.…”

mentioning

confidence: 80%

Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

Onuma¹,

Fujioka²,

Yamaguchi³

et al. 2013

Applied Physics Letters

305

143

View full text Add to dashboard Cite

Temperature-dependent cathodoluminescence spectra were measured from (001) unintentionally doped, (100) Si-doped, and (010) Mg-doped β-Ga2O3 substrates prepared by either the floating zone growth or edge-defined film-fed growth methods. Although β-Ga2O3 is expected to be an indirect bandgap material, direct Γ-Γ transitions were found to be dominant in the optical transmittance spectra. The substrates exhibited no near-band-edge emission and instead exhibited ultraviolet luminescence, blue luminescence (BL), and green luminescence bands. Since the BL intensity strongly depended on the resistivity in the crystals, there was evidence of a correlation between the BL intensity and formation energy of oxygen vacancies.

show abstract

mentioning

confidence: 80%

Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

Onuma¹,

Fujioka²,

Yamaguchi³

et al. 2013

Applied Physics Letters

305

143

View full text Add to dashboard Cite

show abstract

Optical Properties

Onuma¹

2020

Gallium Oxide

View full text Add to dashboard Cite

Modeling and interpretation of UV and blue luminescence intensity in β-Ga2O3 by silicon and nitrogen doping

Onuma

Nakata

Masui³

et al. 2018

Journal of Applied Physics

100

View full text Add to dashboard Cite

Temperature-dependent cathodoluminescence spectra of (2¯01) Si-doped β-Ga2O3 single crystals and (010) N-doped epitaxial films were comprehensively shown to investigate their electronic structure and defect states. The decrease in the self-trapped exciton (STE) emission at low temperatures in heavily Si-doped crystals implied the Debye-Hückel screening of STEs with the critical charge density larger than 2 × 1018 cm−3. The analysis based on the rate equation model suggested a significant influence of the donor-acceptor-pair recombination involving a SiGa donor on the UV luminescence band in the Si-doped crystals. The blue luminescence band was suppressed for the heavily N-doped epitaxial films with a N concentration of 1 × 1018 cm−3, implying the decrease in the oxygen vacancy (VO) concentration by N doping. The increase in the NO acceptor concentration as well as the decrease in the VO concentration were found to contribute to the compensation of residual Si donors resulting in high resistivity of N-doped epitaxial films.

show abstract

Electron‐beam incident‐angle‐ resolved cathodoluminescence studies on bulk ZnO crystals

Cited by 6 publications

References 17 publications

Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

Optical Properties

Modeling and interpretation of UV and blue luminescence intensity in β-Ga2O3 by silicon and nitrogen doping

Contact Info

Product

Resources

About