Electron-Beam-Induced Current and Cathodoluminescence

Reimer, Ludwig

doi:10.1007/978-3-540-38967-5_7

Cited by 2 publications

(1 citation statement)

References 114 publications

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“…These effects are worse when the heterostructure is on SiO 2 /Si compared to the TEM Quantifoil grid. The charging is most severe for lower voltages where the slower electrons are most affected by the accumulated charges at the sample's surface [37]. When charging occurs, the electron beam scanning and penetration are affected, leading to distorted maps.…”

Section: Measurements On the Sio 2 /Si Substratementioning

confidence: 99%

Cathodoluminescence emission and electron energy loss absorption from a 2D transition metal dichalcogenide in van der Waals heterostructures

Bonnet,

Baaboura,

Castioni

et al. 2024

Nanotechnology

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Nanoscale variations of optical properties in transition metal dichalcogenide (TMD) monolayers can be explored with cathodoluminescence (CL) and electron energy loss spectroscopy (EELS) using electron microscopes. To increase the CL emission intensity from TMD monolayers, the MoSe2 flakes are encapsulated in hexagonal boron nitride (hBN), creating van der Waals (VdW) heterostructures. Until now, the studies have been exclusively focused on scanning transmission electron microscopy (STEM-CL) or scanning electron microscopy (SEM-CL), separately. Here, we present results, using both techniques on the same sample, thereby exploring a large acceleration voltage range.We correlate the CL measurements with STEM-EELS measurements acquired with different energy dispersions, to access both the low-loss region at ultra-high spectral resolution, and the core-loss region. This provides information about the weight of the various absorption phenomena including the direct TMD absorption, the hBN interband transitions, the hBN bulk plasmon, and the core losses of the atoms present in the heterostructure. The S(T)EM-CL measurements from the TMD monolayer only show emission from the A exciton. Combining the STEM-EELS and S(T)EM-CL measurements, we can reconstruct different decay pathways leading to the A exciton CL emission. The comparison with SEM-CL shows that this is also a good technique for TMD heterostructure characterization, where the reduced demands on sample preparation are appealing. To demonstrate the capabilities of SEM-CL imaging, we also measured on a SiO2/Si substrate, quintessential in the sample preparation of two-dimensional materials, which is electron-opaque and can only be measured in SEM-CL. The CL-emitting defects of SiO2 make this substrate challenging to use, but we demonstrate that this background can be suppressed by using lower electron energy.

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Section: Measurements On the Sio 2 /Si Substratementioning

confidence: 99%

Cathodoluminescence emission and electron energy loss absorption from a 2D transition metal dichalcogenide in van der Waals heterostructures

Bonnet,

Baaboura,

Castioni

et al. 2024

Nanotechnology

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Development of a High Lateral Resolution Electron Beam Induced Current Technique for Electrical Characterization of InGaN-Based Quantum Well Light Emitting Diodes

et al. 2002

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Electron Beam Induced Current (EBIC) is a Scanning Electron Microscope (SEM)-based technique that can provide information on the electrical properties of semiconductor materials and devices. This work focuses on the design and implemenation of an EBIC system in a dedicated Scanning Transmission Electron Microscope (STEM). The STEM-EBIC technique was used in the characterization of an Indium Gallium Nitride (InGaN) quantum well Light Emitting Diode (LED). The conventional “H-bar” Transmission Electron Microscopy (TEM) sample preparation method using Focused Ion Beam Micromachining (FIBM) was adapted to create an electron-transparent membrane approximately 300 nm thick on the sample while preserving the electrical activity of the device. A STEM-EBIC sample holder with two insulated electrical feedthroughs making contact to the thinned LED was designed and custom made for these experiments. The simultaneous collection of Z-contrast images, EBIC images, and In and Al elemental images allowed for the determination of the p-n junction location, AlGaN and GaN barrier layers, and the thin InGaN quantum well layer within the device. The relative position of the p-n junction with respect to the thin InGaN quantum well was found to be (19 ± 3) nm from the center of the InGaN quantum well.

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Electron-Beam-Induced Current and Cathodoluminescence

Cited by 2 publications

References 114 publications

Cathodoluminescence emission and electron energy loss absorption from a 2D transition metal dichalcogenide in van der Waals heterostructures

Cathodoluminescence emission and electron energy loss absorption from a 2D transition metal dichalcogenide in van der Waals heterostructures

Development of a High Lateral Resolution Electron Beam Induced Current Technique for Electrical Characterization of InGaN-Based Quantum Well Light Emitting Diodes

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