Electron beam induced current investigations of active electrical defects in silicon due to reactive ion etching and reactive ion beam etching processes

Jäger-Waldau, G.; Habermeier, H.‐U.; Zwicker, G.; Bücher, E.

doi:10.1007/bf02671215

Cited by 2 publications

(2 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…301,304 The increased etch rate produces a large fraction of defect states. 305 Reactive ion etching produces nanopillars. To potentially observe QC effects requires an oxidation step to thin the nanopillars, forming a structure similar to spherites.…”

Section: Por-simentioning

confidence: 99%

See 1 more Smart Citation

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Barbagiovanni

Lockwood

Simpson

et al. 2014

Applied Physics Reviews

200

132

View full text Add to dashboard Cite

The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO 2 , and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si 3 N 4 and Al 2 O 3. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters. V

show abstract

Section: Por-simentioning

confidence: 99%

“…Reactive ion etching has a high etch rate producing a large fraction of defect states. 305 Oxidation is used to reduce the diameter, implying the introduction of stress and defect states. [306][307][308]…”

Section: Por-simentioning

confidence: 99%

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Barbagiovanni

Lockwood

Simpson

et al. 2014

Applied Physics Reviews

200

132

View full text Add to dashboard Cite

show abstract

Current Noise Measurements of Surface Defect States in Amorphous Silicon

West

Kakalios

1999

MRS Proc.

View full text Add to dashboard Cite

Measurements of conductance fluctuations in coplanar hydrogenated amorphous silicon (a-Si:H) are reported as a function of surface etching treatments. The noise power spectrum displays a broadened Lorentzian peak, associated with surface damage by CF4 reactive ion etching (RIE), whereas surface etches using ion milling or wet chemicals remove the Lorentzian spectral feature and only a 1/f spectral form for frequency f is observed. The Lorentzian spectral feature can be explained by trapping-detrapping from surface states induced by the RIE etch, which cause fluctuations in the depletion width of the space charge region near the film surface. The thermally activated Lorentzian comer frequency is a measure of the degree of band bending and the Fermi energy at the thin film surface.

show abstract

Electron beam induced current investigations of active electrical defects in silicon due to reactive ion etching and reactive ion beam etching processes

Cited by 2 publications

References 20 publications

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Current Noise Measurements of Surface Defect States in Amorphous Silicon

Contact Info

Product

Resources

About