Electron-beam-induced dissociation of (B,D) complexes in diamond mediated by multiple vibrational excitations

Habka, Nada; Chevallier, J.; Barjon, Julien

doi:10.1103/physrevb.81.045207

Cited by 9 publications

(14 citation statements)

References 30 publications

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“…comprised of interstitial nitrogen surrounded by several vacancies. Electronic excitations, delivered by energetic light ions [31,32] or electrons [33], has been shown to aid repair of crystal damage and induce the dissociation of boron-deuterium pairs in diamond.…”

Section: Discussionmentioning

confidence: 99%

Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond

et al. 2012

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Exposure to beams of low-energy electrons (2-30 keV) in a scanning electron microscope locally induces formation of NV-centers without thermal annealing in diamonds that have been implanted with nitrogen ions. We find that non-thermal, electron-beam-induced NV-formation is about four times less efficient than thermal annealing. But NV-center formation in a consecutive thermal annealing step (800 • C) following exposure to low-energy electrons increases by a factor of up to 1.8 compared to thermal annealing alone. These observations point to reconstruction of nitrogen-vacancy complexes induced by electronic excitations from low-energy electrons as an NV-center formation mechanism and identify local electronic excitations as a means for spatially controlled room-temperature NV-center formation. 8

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Section: Discussionmentioning

confidence: 99%

Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond

et al. 2012

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“…However, the carrier density temperature dependence after deuterium diffusion shows that the conduction is governed by an impurity band or hopping conduction leading to an overestimation of this ratio at room temperature. The ratio p H (300K)/N A of the four samples is easily explained by an overestimation of the electrically active boron atoms [B S ]=N A in the diamond matrix since a large fraction of these atoms are passivated by deuterium atoms as previously reported [22][23][24][25][26][27][28][29][30][31] . This passivation of boron by deuterium or hydrogen is well known and expected.…”

Section: Passivation Of Boron Acceptors By Deuterium Atomsmentioning

confidence: 71%

Boron-deuterium complexes in diamond: How inhomogeneity leads to incorrect carrier type identification

Kumar¹,

Pernot²,

Omnès³

et al. 2011

Journal of Applied Physics

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International audienceThe electrical properties of boron doped diamond layers after deuterium diffusion have been investigated by Hall effect and capacitance voltage measurements. It is found that (i) the deuterated boron doped diamond layers are inhomogeneous after the deuterium diffusion, resulting in conducting and insulating areas; (ii) negative and positive Hall voltages are measured on the same boron doped sample after deuterium diffusion, depending on the contact geometry (negative with van der Pauw and positive with mesa etched Hall bar); and (iii) in the conducting area, the majority of the boron-deuterium complexes are not ionized after the deuterium diffusion. The detailed electrical measurements using mesa-insulating Hall bar structures revealed that the existence of inhomogeneous regions with conducting and insulating areas is the most probable source of wrong n-type conductivity in deuterated boron doped diamond layers of this work. In the light of this result, the possibility of an incorrect assignment of a shallow donor previously reported in deuterated boron doped diamond is discussed. Finally, confirmation is given that the boron deuterium complexes created after the deuterium diffusion are neutral in p-type diamond

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“…The kinetics of boron re‐activation under different electron irradiation conditions (temperature, dose, isotope) could be recorded thanks to the luminescence spectroscopy of bound excitons. A new dissociation mechanism was revealed based on multiple vibrational excitations of the center . It might open new perspectives in the understanding the electron beam dissociation of hydrogen‐related complexes, such as (Mg,H) pairs in p‐type GaN …”

Section: Recombination Processesmentioning

confidence: 99%

Luminescence Spectroscopy of Bound Excitons in Diamond

Barjon

2017

Physica Status Solidi (a)

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Since the research on diamond doping remains an issue for electronic applications, the luminescence spectroscopy of bound excitons appears essential to evaluate the properties of shallow dopants in diamond. In this paper, the formation and recombination processes of bound excitons in diamond are reviewed for boron acceptors, phosphorus, and arsenic donors. Pulsed and continuous excitations are considered, the latter being currently used for the measurement of donor and acceptor concentrations in diamond.

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Electron-beam-induced dissociation of (B,D) complexes in diamond mediated by multiple vibrational excitations

Cited by 9 publications

References 30 publications

Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond

Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond

Boron-deuterium complexes in diamond: How inhomogeneity leads to incorrect carrier type identification

Luminescence Spectroscopy of Bound Excitons in Diamond

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