2015
DOI: 10.1063/1.4927593
|View full text |Cite
|
Sign up to set email alerts
|

Electron beam induced etching of carbon

Abstract: Nanopatterning of graphene and diamond by low energy ( 30 keV) electrons has previously been attributed to mechanisms that include atomic displacements caused by knock-on, electron beam heating, sputtering by ionized gas molecules, and chemical etching driven by a number of gases that include N 2 . Here we show that a number of these mechanisms are insignificant, and that the nanopatterning process can instead be explained by etching caused by electron induced dissociation of residual H 2 O molecules. Our res… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
19
0

Year Published

2015
2015
2024
2024

Publication Types

Select...
7

Relationship

2
5

Authors

Journals

citations
Cited by 15 publications
(19 citation statements)
references
References 41 publications
0
19
0
Order By: Relevance
“…It must also be noted that residual H 2 O is abundant in the high vacuum systems normally used for EBIE, and it gives rise to electron induced oxidation and etching of carbonaceous materials. [37][38][39] Active suppression of residual H 2 O was found to be the second necessary prerequisite for the present study, and we discovered that the use of a low power RF remote plasma generator can not only eliminate the effects of organic contaminants, 40,41 but also those of residual water. It can therefore enable robust electron stimulated processing of surfaces, as is detailed below.…”
Section: Resultsmentioning
confidence: 74%
“…It must also be noted that residual H 2 O is abundant in the high vacuum systems normally used for EBIE, and it gives rise to electron induced oxidation and etching of carbonaceous materials. [37][38][39] Active suppression of residual H 2 O was found to be the second necessary prerequisite for the present study, and we discovered that the use of a low power RF remote plasma generator can not only eliminate the effects of organic contaminants, 40,41 but also those of residual water. It can therefore enable robust electron stimulated processing of surfaces, as is detailed below.…”
Section: Resultsmentioning
confidence: 74%
“…The localized Ar gas species is inert thus not suspected to contribute to the chemical etching of the carbonaceous matrix within the deposits, however inert gas flow has been shown to increase concentration of residual H 2 O adsorbates in the area of localized flux. 46 Hence, the purification mechanism envisioned is a multistep process where (1) Ar gas is locally injected by a GIS, (2) Residual H 2 O that contributes toward the thermally driven purification reaction have multiple possible origins from within the system. Specifically H 2 O molecules may be supplied from (1) outgassing of chamber walls, (2) outgassing of the substrate, or (3) from contamination in the inert gas line.…”
Section: Acs Applied Materials and Interfacesmentioning
confidence: 99%
“…However, the scalability of the progress is limited and the material is damaged during structuring. Future direct patterning by electron‐beam induced etching (EBIE) might circumvent this issue . A part of a photonic crystal cavity fabricated by ion milling is presented in Figure d.…”
Section: Fabrication Of Integrated Photonic Circuitsmentioning
confidence: 99%
“…Future direct patterning by electron-beam induced etching (EBIE) might circumvent this issue. [181][182][183] A part of a photonic crystal cavity fabricated by ion milling is presented in Figure 5d.…”
Section: Scd Nanophotonic Fabricationmentioning
confidence: 99%