Electron-beam-induced modification of PbSnTe surface morphology under HEED monitoring of MBE growth

Borynyak, L. A.; Velichko, A. A.; Ilyushin, V. A.; Ostertak, Dmitriy I.; Peisakhovich, Yu. G.; Filimonova, N. I.

doi:10.1134/s1063739708030025

Cited by 2 publications

(1 citation statement)

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“…In contrast to other compound semiconductors, for lead chalcogenides the values of the molecule dissociation energy in the crystalline and gaseous states exceed the values of the sublimation energy E subl at 298 K [30]. As a result, during the sputtering of lead chalcogenides not individual atoms, but the entire molecules and molecular complexes are leaving the surface [31]. Additionally, it is well known that the evaporation of the lead salt compounds takes place predominantly in the form of a binary molecule and the degree of the dissociation is only a few percent [32].…”

Section: Resultsmentioning

confidence: 91%

RF sputtering of epitaxial lead chalcogenide films in argon and krypton plasma

Zimin¹,

Amirov²,

Горлачев³

2011

Semicond. Sci. Technol.

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The measurements of sputtering etch rates for monocrystalline (1 1 1)-oriented epitaxial films of semiconductor binary compounds PbTe, PbSe, PbS in RF high-density low-pressure inductively coupled argon and krypton plasma were performed. Films with 1-5 μm thickness were grown on Si(1 1 1) and BaF 2 (1 1 1) substrates using molecular beam epitaxy. Sputtering was carried out with the energy of Ar + and Kr + ions of 20-400 eV. The sputtering etch rates of the binary lead chalcogenides are demonstrated to have abnormally high values in comparison with the basic semiconductor materials of microelectronics. The sputtering yield values for PbTe, PbSe, PbS for the average energy of the argon ions of 200 eV are practically equal (0.46 ± 0.05 molecule/ion) and vary linearly with the variation of the ion energy. Substitution of the plasma discharge gas from the argon to krypton does not result in a significant change in the sputtering yield of lead chalcogenides. The physical principles of the observed phenomena are discussed.

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Section: Resultsmentioning

confidence: 91%