Electron‐Beam–Induced Nanometer‐Scale Deposition

Silvis-Cividjian, Natalia; Hagen, C. W.

doi:10.1016/s1076-5670(06)43001-9

Cited by 45 publications

(58 citation statements)

References 278 publications

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“…This is not the first review on FEBIP: reviews by Silvis-Cividjian and Hagen 41 and Randolph et al 42 appeared earlier and summarized published results and achievements. It is felt that there is a need for a more critical review, in which it is determined to which extent the available models for FEBIP are valid and complete.…”

Section: Introductionmentioning

confidence: 95%

A critical literature review of focused electron beam induced deposition

Dorp

Hagen

2008

Journal of Applied Physics

486

577

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An extensive review is given of the results from literature on electron beam induced deposition. Electron beam induced deposition is a complex process, where many and often mutually dependent factors are involved. The process has been studied by many over many years in many different experimental setups, so it is not surprising that there is a great variety of experimental results. To come to a better understanding of the process, it is important to see to which extent the experimental results are consistent with each other and with the existing model. All results from literature were categorized by sorting the data according to the specific parameter that was varied ͑current density, acceleration voltage, scan patterns, etc.͒. Each of these parameters can have an effect on the final deposit properties, such as the physical dimensions, the composition, the morphology, or the conductivity. For each parameter-property combination, the available data are discussed and ͑as far as possible͒ interpreted. By combining models for electron scattering in a solid, two different growth regimes, and electron beam induced heating, the majority of the experimental results were explained qualitatively. This indicates that the physical processes are well understood, although quantitatively speaking the models can still be improved. The review makes clear that several major issues remain. One issue encountered when interpreting results from literature is the lack of data. Often, important parameters ͑such as the local precursor pressure͒ are not reported, which can complicate interpretation of the results. Another issue is the fact that the cross section for electron induced dissociation is unknown. In a number of cases, a correlation between the vertical growth rate and the secondary electron yield was found, which suggests that the secondary electrons dominate the dissociation rather than the primary electrons. Conclusive evidence for this hypothesis has not been found. Finally, there is a limited understanding of the mechanism of electron induced precursor dissociation. In many cases, the deposit composition is not directly dependent on the stoichiometric composition of the precursor and the electron induced decomposition paths can be very different from those expected from calculations or thermal decomposition. The dissociation mechanism is one of the key factors determining the purity of the deposits and a better understanding of this process will help develop electron beam induced deposition into a viable nanofabrication technique.

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Section: Introductionmentioning

confidence: 95%

A critical literature review of focused electron beam induced deposition

Dorp

Hagen

2008

Journal of Applied Physics

486

577

View full text Add to dashboard Cite

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“…The patterning strategy is such that the lines were written serially, i.e., one after the other and from bottom to top. The total dose was 500 mC∕cm 2 . Six patterns were written with N ¼ 1, 2, 10, 40, 200, and 800 and τ dwell ¼ 200, 100, 20, 5, 1, and 0.25 μs, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…5, i.e., in serial mode, single-pixel wide, single pass, and a dwell time per pixel of 200 μs. The total dose was 500 mC∕cm 2 . In between writing different lines, the beam was blanked using a fast beam blanker.…”

Section: Resultsmentioning

confidence: 99%

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Size and shape control of sub-20 nm patterns fabricated using focused electron beam induced processing

et al. 2014

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Abstract.In a first study to analyze the feasibility of electron beam-induced deposition (EBID) for creating certain patterns in advanced lithography, line patterns were fabricated on silicon wafers using EBID. The growth conditions were such that the growth rate is fully determined by the electron flux (the current limited growth regime). It is experimentally verified that different patterning strategies, such as serial versus parallel patterning and single pass patterning versus multiple pass patterning, all lead to the same result in this growth regime. Images of EBID lines, imaged in a scanning electron microscope, were analyzed to determine the position of the lines, the width of the lines, and the linewidth roughness (LWR). The results are that the lines have an average width of 13.7 nm, an average standard deviation of 1.6 nm in the center position of the lines, and an average LWR of 4.5 nm (1σ value). As an example of the capabilities of EBID, a logic-resembling lithography pattern was fabricated.

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“…The reader interested in EBID is referred to some recently published review papers. [3][4][5][6] The advantage of EBID over EBL is that it is a direct deposition technique and provides a smaller minimum feature size. However, both EBL and EBID are inherently slow lithography techniques compared to light lithography techniques, because they are serial writing processes rather than parallel.…”

Section: Introductionmentioning

confidence: 99%

Parallel electron-beam-induced deposition using a multi-beam scanning electron microscope

Post

Gheidari

Hagen

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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Lithography techniques based on electron-beam-induced processes are inherently slow compared to light lithography techniques. The authors demonstrate here that the throughput can be enhanced by a factor of 196 by using a scanning electron microscope equipped with a multibeam electron source. Using electron-beam induced deposition with MeCpPtMe 3 as a precursor gas, 14 Â 14 arrays of Pt-containing dots were deposited on a W/Si 3 N 4 /W membrane, with each array of 196 dots deposited in a single exposure. The authors demonstrate that by shifting the array of beams over distances of several times the beam pitch, one can deposit rows of closely spaced dots that, although originating from different beams within the array, are positioned within 5 nm of a straight line.

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Electron‐Beam–Induced Nanometer‐Scale Deposition

Cited by 45 publications

References 278 publications

A critical literature review of focused electron beam induced deposition

A critical literature review of focused electron beam induced deposition

Size and shape control of sub-20 nm patterns fabricated using focused electron beam induced processing

Parallel electron-beam-induced deposition using a multi-beam scanning electron microscope

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