Electron beam induced orientation selective epitaxial growth of layers on Si(100) substrates

Inoue, Tomoyasu; Saito, Tomohiro; Shida, Satoshi

doi:10.1016/j.jcrysgro.2007.02.013

Cited by 22 publications

(24 citation statements)

References 9 publications

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“…MS has been used to grow a variety of epitaxial oxides of interest as optical waveguides, [217] light emitters, [218][219][220][221] capacitor dielectrics, [222,223] high-T c superconductors, [224][225][226][227][228] photocatalysts, [229] gas sensors, [83] ferroelectrics, [230][231][232][233] piezoelectrics, [46,234] conductive oxides, [235][236][237][238][239] gate dielectrics, [29,[240][241][242][243][244] magnetoresistive materials, [245][246][247][248][249][250][251][252][253][254][255][256][257] general purpose insulators, [258,259] magnetic insulators, [260,261...…”

Section: Magnetron Sputteringmentioning

confidence: 99%

Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

2009

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The detailed science and technology of crystalline oxide film growth using vacuum methods is reviewed and discussed with an eye toward gaining fundamental insights into the relationships between growth process and parameters, film and interface structure and composition, and electronic, magnetic and photochemical properties. The topic is approached first from a comparative point of view based on the most widely used growth methods, and then on the basis of specific material systems that have generated very high levels of interest. Emphasis is placed on the wide diversity of structural, electronic, optical and magnetic properties exhibited by oxides, and the fascinating results that this diversity of properties can produce when combined with the degrees of freedom afforded by heteroepitaxy.

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Section: Magnetron Sputteringmentioning

confidence: 99%

Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

2009

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“…These properties have promoted CeO 2 as an alternative gate to SiO 2 . Previously, a large body of work has been carried out on CeO 2 film deposited on Si substrate using various deposition techniques, such as spray pyrolysis, electron beam evaporation, reactive sputtering, ion-beam sputtering, metal-organic decomposition (MOD), pulsed laser deposition and others [34][35][36][37][38][39][40][41][42][43][44][45][46][47][48]. Among these techniques, MOD method appears to be a convenient route due to its simplicity in processing control and accuracy in composition control [49] if compared to vacuum techniques, such as reactive sputtering and electron beam evaporation [34,37,40].…”

Section: Introductionmentioning

confidence: 99%

Physical characterization of post-deposition annealed metal-organic decomposed cerium oxide film spin-coated on 4H-silicon carbide

Lim

Cheong

Lockman

2010

Journal of Alloys and Compounds

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“…7,8 In the previous work, we have reported that electron beams with acceleration energy around 35 and 90 eV lead to the CeO 2 ͑100͒ layer growth, which is thought to have a surface potential modification effect similar to Ϯ15 V bias application. 11 In this section, we report experimental results for the determination of exact optimum electron energy. Figure 2 shows the sample current characteristics as a function of electron energy.…”

Section: Resultsmentioning

confidence: 99%

“…This article describes a novel technology to realize spatially varied OSE utilizing low-energy electron-beam irradiation instead of substrate bias application. 11 Here we report the CeO 2 ͑100͒ layer growth in a lowenergy electron-beam-irradiated area on Si͑100͒ substrates and show optimization of growth parameters, such as incident electron energy, oxygen flow during reactive sputtering, and resistivity of Si substrates. Interfacial properties are investigated using cross-sectional transmission electron microscopy ͑XTEM͒.…”

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confidence: 93%

Optimization of Growth Parameters in Electron-Beam-Induced Orientation Selective Epitaxy of CeO[sub 2](100)∕Si(100) Structures

Inoue

Ohtake

Otani

et al. 2008

J. Electrochem. Soc.

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Based on orientation selective epitaxy ͑OSE͒ of CeO 2 ͑100͒ and CeO 2 ͑110͒ layers on Si͑100͒ substrates by substrate bias control in reactive magnetron sputtering, we have found the OSE growth of CeO 2 ͑100͒ layers induced by electron-beam irradiation, instead of substrate bias. In order to improve crystalline quality and interfacial properties, growth parameters of incident electron energy and an oxygen flow rate are analyzed, including the effect of oxygen radical beams. The electron-beam-induced OSE method gives a way to two-dimensionally spatially varied OSE.Epitaxial cerium dioxide ͑CeO 2 ͒ layers on silicon substrates are of great interest due to favorable properties as an electronic material, for example, high dielectric constant of 26, high chemical stability, transmission in visible and IR regions, and high efficient UV absorption. Epitaxial CeO 2 layers on Si͑100͒ substrates usually grow with ͑110͒ orientation. 1-5 After the report on the CeO 2 ͑100͒ layer growth on Si͑100͒ substrates with atomically cleaned reconstructed surfaces by molecular beam epitaxy, 6 it was found that orientation selective epitaxy ͑OSE͒ of CeO 2 ͑100͒ and CeO 2 ͑110͒ layers on Si͑100͒ substrates were capable by controlling substrate bias and the growth rate in reactive magnetron sputtering. 7,8 The epitaxial relation model of CeO 2 ͑100͒ and CeO 2 ͑110͒ on Si͑100͒ has been proposed with CeSi 2 ͑100͒ layer as intermediate layer, 9 and it is reported that CeO 2 ͑110͒ is usually preferred from thermodynamical considerations. 10 This preferential orientation selectivity is thought to be due to surface potential modification by substrate bias. In our previous work, it was clarified that substrate bias of Ϯ15 V leads to the CeO 2 ͑100͒ layer growth, whereas CeO 2 ͑110͒ layers grow on nonbiased substrates. 7,8 It is noted that OSE is irrespective of surface potential bending directions, which gives us an idea of surface potential modification by irradiation of charged particles, electrons and/or ions.This OSE technology has a lot of possibilities for applications to device fabrication processes and for OSE of many other materials. For future sophisticated applications, it is desired to develop a new technology for two-dimensionally spatially varied OSE. This article describes a novel technology to realize spatially varied OSE utilizing low-energy electron-beam irradiation instead of substrate bias application. 11 Here we report the CeO 2 ͑100͒ layer growth in a lowenergy electron-beam-irradiated area on Si͑100͒ substrates and show optimization of growth parameters, such as incident electron energy, oxygen flow during reactive sputtering, and resistivity of Si substrates. Interfacial properties are investigated using cross-sectional transmission electron microscopy ͑XTEM͒. The effect of oxygen radical beams in reactive sputtering is also investigated compared with conventional reactive sputtering. ExperimentalSi͑100͒ wafers cut 52 ϫ 52 mm in size were chemically cleaned to make H-terminated surfaces by the following procedure: dipping...

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Electron beam induced orientation selective epitaxial growth of layers on Si(100) substrates

Cited by 22 publications

References 9 publications

Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

Physical characterization of post-deposition annealed metal-organic decomposed cerium oxide film spin-coated on 4H-silicon carbide

Optimization of Growth Parameters in Electron-Beam-Induced Orientation Selective Epitaxy of CeO[sub 2](100)∕Si(100) Structures

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