Electron Beam Induced Resistance Change for Device Characterization and Defect Localization

Abstract

Semiconductor Test Site structures were analyzed using an EBIRCH (Electron Beam Induced Resistance CHange) system. Localization of a RX (active area) to PC (gate) short was achieved with resolution that surpassed that of OBIRCH (Optical Beam Induced Resistance CHange). A voltage breakdown test structure at Metal 1 was stressed in the system, giving isolation to the specific contact. A five-fin diode macro was examined, and it is believed that the electrically active diffusions were imaged as individual fins from Metal 1. A series of ring oscillator devices were examined in steady state condition, and careful consideration of the image supports a hypothesis that Seebeck effect, from heating material interfaces in an EBIRCH system, is the reason for the “dipoles” reported in earlier literature.

Resistive Open Defect Isolation in Nano-Probing

“…For resistive open defect where the resistance is over 100KΩ, the two-terminal EBAC is a powerful technique in most cases, however, for other cases where resistance is below 10KΩ range, two-terminal EBAC often shows inclusive results either due to amplifier overloading or poor contrast. In these cases, EBIRCh is more effective in locating the defect [4], [5], [6].…”

Plasma FIB Delayering and Nanoprobing with EBIRCH for Localizing Metal Shorts in DRAM

“…EBIRCH is known to be a useful nanoprobing tool to find metal shorts [1]. In this method, the electron beam of the SEM scans the region of interest, detects momentary current changes between the two probes, and locates resistive short defects.…”

EBIRCH Localization for Low-Current Soft Fails

“…Soft failures, by virtue of being highly resistive, are therefore extremely challenging for the optimization of devices. EBIRCH (Electron Beam Induced Resistance CHange) has been shown to be a powerful technique for device characterization and defect localization [4,5]. EBIRCH involves applying a voltage across a circuit, typically between two nanoprobes, and determining the change in resistance or impedance across the device [6].…”