Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells

Abstract

Articles you may be interested inLow energy electron beam induced damage on InGaN/GaN quantum well structure J. Appl. Phys. 109, 083105 (2011); 10.1063/1.3574655 Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope Appl. Electron-beam-induced strain within InGaN quantum wells: False indium "cluster" detection in the transmission electron microscope Appl. Phys. Lett. 83, 5419 (2003); 10.1063/1.1636534 Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire Appl.

Does In form In-rich clusters in InGaN quantum wells?

“…However, as the electron dose increased, indium-rich clusters formed, just as in the Cambridge grown samples [18]. O'Neill et al [19] also reported that In-rich clusters formed as a result of electron beam damage in their specimens. We also prepared TEM specimens using only mechanical polishing instead of using a combination of mechanical polishing followed by ion beam thinning.…”

Research challenges to ultra‐efficient inorganic solid‐state lighting

“…InGaN materials tend to degrade during post processing and characterization by the most direct technique, electron-beam microscopy [67,86]. And less direct techniques, such as cathodoluminescence, have been unable to unambiguously determine the spatial distribution of indium.…”

Time, energy, and spatially resolved TEM investigations of defects in InGaN

“…The homogeneity of InN-GaN alloys is widely debated 7,8 and the existence of a miscibility gap is postulated that limits the indium solubility in GaN leading to a local formation of In-rich nanoclusters. Concerns were recently raised 9,10 and debated 11 about the use of electron microscopy to investigate the non-equilibrium state of the InGaN system since the exposure of specimens to high-energy electron beams may enhance phase separation.…”