Electron beam induced SiO2 etch selectivity and its application to oxide nano-aperture formation

Kim, D. W.; Kim, Y. C.; Bui, Van-Chien; Song, Miyeon; Han, Chul Hee; Choi, Seong Soo

doi:10.1016/j.mee.2006.05.004

Cited by 4 publications

(7 citation statements)

References 13 publications

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“…Etching progressed vertically in the central region and laterally in the peripheral region, both for times shorter than 6 s. After 6 s, once a hole was formed, the diameters of the nanopore and the shallow-etched region further increased at a slower rate, as can be observed in the time trace of both diameters ( figure 5(B)). Such nanopore expansion kinetics were previously observed for nanopores drilled by a high-energy focused electron beam in Si 3 N 4 [17] and Al 2 O 3 [39], and, as we have previously reported, for FEBIE nanopore formation [18]. Initial expansion rates of 6 and 17.5 nm s −1 were observed for the central and peripheral regions, respectively, for times shorter than 10 s. For times longer than 10 s, the etching rate was reduced to 1 and 4 nm s −1 , respectively.…”

Section: Nanopore Size and Shapesupporting

confidence: 74%

“…This shape was found to depend on the preparation methodology and specific fabrication conditions. While nanopores prepared by direct ion drilling adopt a conical shape [27], the formation of hourglass-shaped nanopores was found for nanopores prepared by direct focused electron beam drilling [17,28,29]. Since the shape of nanopores prepared by the FEBIE process has not been revealed yet, we present here a detailed characterization of thus prepared nanopores.…”

Section: Introductionmentioning

confidence: 93%

“…In particular, the use of the highly energetic focused electron beam of a transmission electron microscope (TEM) for nanopore drilling has become widespread in recent years [13,16]. This is in large part due to the finding that the electron beam can be used for posttreatment tuning of the pore size [13,16,17].…”

Section: Introductionmentioning

confidence: 99%

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Effects of electrons on the shape of nanopores prepared by focused electron beam induced etching

2011

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The fabrication of nanometric pores with controlled size is important for applications such as single molecule detection. We have recently suggested the use of focused electron beam induced etching (FEBIE) for the preparation of such nanopores in silicon nitride membranes. The use of a scanning probe microscope as the electron beam source makes this technique comparably accessible, opening the way to widespread fabrication of nanopores. Since the shape of the nanopores is critically important for their performance, in this work we focus on its analysis and study the dependence of the nanopore shape on the electron beam acceleration voltage. We show that the nanopore adopts a funnel-like shape, with a central pore penetrating the entire membrane, surrounded by an extended shallow-etched region at the top of the membrane. While the internal nanopore size was found to depend on the electron acceleration voltage, the nanopore edges extended beyond the primary electron beam spot size due to long-range effects, such as radiolysis and diffusion. Moreover, the size of the peripheral-etched region was found to be less dependent on the acceleration voltage. We also found that chemical etching is the rate-limiting step of the process and is only slightly dependent on the acceleration voltage. Furthermore, due to the chemical etch process the chemical composition of the nanopore rims was found to maintain the bulk membrane composition.

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Section: Nanopore Size and Shapesupporting

confidence: 74%

Section: Introductionmentioning

confidence: 93%

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Effects of electrons on the shape of nanopores prepared by focused electron beam induced etching

2011

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“…Focused electron-beam-induced etching (FEBIE) is an attractive process for rapid and maskless fabrication of nanometric features [22][23][24][25]. In contrast to the physical mechanisms involved in mass removal when using high electron or ion beams as mentioned above, in the FEBIE process a chemical reaction involving a precursor gas is induced by an electron beam and results in etching of the substrate.…”

Section: Introductionmentioning

confidence: 99%

The controlled fabrication of nanopores by focused electron-beam-induced etching

et al. 2009

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The fabrication of nanometric holes within thin silicon-based membranes is of great importance for various nanotechnology applications. The preparation of such holes with accurate control over their size and shape is, thus, gaining a lot of interest. In this work we demonstrate the use of a focused electron-beam-induced etching (FEBIE) process as a promising tool for the fabrication of such nanopores in silicon nitride membranes and study the process parameters. The reduction of silicon nitride by the electron beam followed by chemical etching of the residual elemental silicon results in a linear dependence of pore diameter on electron beam exposure time, enabling accurate control of nanopore size in the range of 17-200 nm in diameter. An optimal pressure of 5.3 x 10(-6) Torr for the production of smaller pores with faster process rates, as a result of mass transport effects, was found. The pore formation process is also shown to be dependent on the details of the pulsed process cycle, which control the rate of the pore extension, and its minimal and maximal size. Our results suggest that the FEBIE process may play a key role in the fabrication of nanopores for future devices both in sensing and nano-electronics applications.

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“…6 The anisotropic wet etching technique has been widely employed in the formation of silicon patterns. [7][8][9][10][11][12][13][14][15][16] Using KOH-based aqueous solution, a Si͑111͒ plane is usually formed due to its lowest etching rate. 7 Nevertheless, alcoholic moderators are introduced into the KOH solution, 17 and the etching rate on Si͑110͒ is reduced dramatically, thereby the Si͑110͒ plane could be obtained.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of continuous V-grooves with Si(110) sidewalls using <inline-formula><math display="inline" overflow="scroll"><mrow><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math></inline-formula> resist mask by anisotropic wet etching

Zhang

Guo

et al. 2009

J. Micro/Nanolith. MEMS MOEMS

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Modification for substrate surface morphology is a kind of effective technique for controlling thin film growth orientation. In this work, continuous V-grooves are fabricated on monocrystalline Si͑100͒ substrate using TiO 2 resist mask by anisotropic wet etching. Influence of thickness of TiO 2 resist mask on etching patterns is investigated. The integrity and cross section of V-grooves are observed by laser scanning confocal microscope ͑LSCM͒ and scanning electronic microscopy ͑SEM͒, respectively. The floccules precipitating in V-grooves are verified by an energy dispersive spectrometer ͑EDS͒. Results indicate that the Si͑100͒ substrate surface is modified to the array of V-grooves along the Si͓010͔ direction with Si͑110͒ sidewalls. © 2009 Society of Photo-Optical Instrumentation Engineers.

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Electron beam induced SiO2 etch selectivity and its application to oxide nano-aperture formation

Cited by 4 publications

References 13 publications

Effects of electrons on the shape of nanopores prepared by focused electron beam induced etching

Effects of electrons on the shape of nanopores prepared by focused electron beam induced etching

The controlled fabrication of nanopores by focused electron-beam-induced etching

Fabrication of continuous V-grooves with Si(110) sidewalls using <inline-formula><math display="inline" overflow="scroll"><mrow><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math></inline-formula> resist mask by anisotropic wet etching

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