Electron beam irradiation effects on GaN/InGaN multiple quantum well structures

Abstract

GaN-based semiconductors have a strong potential for applications in space systems because of their high radiation resistance. Here, we investigate the influence of 1.5 MeV electron irradiation on the structural, electrical, and optical properties of InGaN/GaN multiple quantum wells (MQWs). The results show that at lower electron fluencies, the indium content in the
InGaN/GaN MQWs decreases by about 0.4% because of the ionization of valence electrons induced by electron irradiation, but at higher electron fluencies, the indium concentration increases by about 1.5% because of the appearance of indium-rich "clusters" in the homogeneous quantum wells. Moreover, the fitted activation energy of the irradiated quantum wells increase by about 16% than that of the as-grown MQWs.

The evolution of indium precipitation in gallium focused ion beam prepared samples of InGaAs/InAlAs quantum wells under electron beam irradiation

“…The mechanisms of Ga + ion implantation into III–V semiconductors have been established, 18 and it was found that Ga + implantation into InGaN may produce metallic In clusters during the Ga + ion irradiation, which can be attributed to the lower displacement energy of In than Ga 19 . Besides, the ionisation‐enhanced diffusion may also be significant 20 …”