Electron beam lithography—Resolution limits

Broers, A. N.; Hoole, A. C. F.; Ryan, Joseph M.

doi:10.1016/0167-9317(95)00368-1

Cited by 196 publications

(126 citation statements)

References 17 publications

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“…It seems that most of the possible mechanisms are the same for DEBER and ordinary e-beam lithography [7,8,9] but their contribution to the lateral resolution lowering should be reconsidered.…”

Section: Introductionmentioning

confidence: 99%

Nanophotonic structure formation by dry e-beam etching of the resist: resolution limitation origins

Rogozhin¹,

Bruk²,

Zhikharev³

et al. 2017

Computer Optics

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A wide range of structures for nanophotonics and optoelectronics can be formed by dry e-beam etching of the resist (DEBER). High resist sensitivity due to chain depolymerization reaction provides efficient etching with high throughput of the method. The structures obtained by the DEBER in this research are well-rounded diffraction gratings, binary gratings and staircase profiles. The major disadvantage of DEBER is poor lateral resolution, which may be caused by different physical mechanisms. Four groups of possible mechanisms leading to the resolution limitation are determined and the influence of some mechanisms is estimated Keywords: DEBER, e-beam etching, nanophotonics, diffractive optical elements, diffractive optics, three-dimensional lithography, three-dimensional fabrication, microlithography, optical design and fabrication.Citation: Rogozhin A, Bruk M, Zhikharev E, Sidorov F. Nanophotonic structure formation by dry e-beam etching of the resist: resolution limitation origins. Computer Optics 2016; 41(4): 499-503. DOI: 10.18287/2412DOI: 10.18287/ -6179-2017.Acknowledgments: This study was partially supported by the President of the Russian Federation's grant No. MK-3327.2017.9. IntroductionDry electron beam etching of resist (DEBER) proposed by Bruk et. al. [1,2] could be used for formation of wide range of optoelectronic and photonic structures. The method is based on the chain depolymerization reaction, which takes place in the polymer resists during e-beam exposure at the glass-transition or higher temperatures. The volatile reaction products (monomers) are pumped out during exposure. The method provides quite simple way for formation of well-rounded or 3D structures. In some cases, it could be much more flexible than usual methods, in others it could be more productive or convenient. Similar phenomena were observed in PMMA during ion beam irradiation [3] and UV radiation [4].PMMA sensitivity to e-beam in the DEBER method is about 100 times higher than that in the standard "wet" e-beam lithography process. Because of high vertical resolution (about 1 nm) the method could be used for high-precision 3D structuring. On the other hand, DEBER lateral resolution (about 200 nm) and contrast (0.7 -1.5) are rather low. It is difficult to use DEBER method for nanophotonic structure fabrication due to low lateral resolution. For nanophotonic applications the lateral resolution of the formation method should be lower than 100 nm [5,6].It is not clear which physical mechanism leads to the lateral resolution limitation. It seems that most of the possible mechanisms are the same for DEBER and ordinary e-beam lithography [7,8,9] but their contribution to the lateral resolution lowering should be reconsidered.In this paper structures of diffraction or binary gratings, some diffractive optical elements (DOE), 3D structures or planar photonic crystals obtained by DEBER method are presented. Also in the paper, different mechanisms that could lead to the broadening of the trenches

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Section: Introductionmentioning

confidence: 99%

Nanophotonic structure formation by dry e-beam etching of the resist: resolution limitation origins

Rogozhin¹,

Bruk²,

Zhikharev³

et al. 2017

Computer Optics

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“…There are several established techniques by which an electron beam can be used to create patterned structures upon a surface, the most common of which is electron beam lithography. Electron beam lithography is a multi-step process in which a sacrificial polymer layer is first deposited onto the sample that can achieve feature sizes down to ten nanometer length scales (Broers et al 1996;Liu et al 2002). The electron beam can also be used to locally induce or break bonds to pattern nanostructures (Mendes et al 2004) or simply burn material away from selected areas of the sample (Egerton et al 2004).…”

Section: Introductionmentioning

confidence: 99%

Dopant Driven Electron Beam Lithography

Kidd¹

2012

Scanning Electron Microscopy

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“…An appropriate hardness is needed to deform the organic resist, which is coated on the substrate, for nanopattern transfer, and avoid damage to the nanopatterns generated during the imprint process. SiO 2 is generally used as the material of an NIL mold, because highly accurate nanopatterns can be fabricated on its surface by using electron beam lithography and reactive ion etching, [9][10][11] and SiO 2 has suitable mechanical properties. However, the SiO 2 is fragile and expensive, which limits its use in NIL as a mold.…”

Section: Introductionmentioning

confidence: 99%

Nanoindentation Analysis for Mechanical Properties of Electroless NiP Imprinting Mold Replicated from Self-Assembled-Monolayer Modified Master Mold

Lin

Saito

Homma

2013

Jpn. J. Appl. Phys.

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A NiP imprinting mold with patterns, whose size is from nanometer to submicrometer (170, 500, and 1000 nm diameter), was fabricated by electroless deposition of NiP on a 3-aminopropyltriethoxysilane (APTES) modified master mold. The NiP deposit as a replicate mold was then detached from the master mold. The initial NiP deposition in patterns of the master mold was investigated; moreover, nanoindentation was successfully performed on a single NiP pattern for investigating the hardness. The NiP had a similar grain size in different sizes of patterns of the master mold during the initial deposition, as well as the same hardness of the NiP patterns (approximately 12 GPa) was observed. These results indicated that the initial NiP deposition and hardness of NiP were not size dependent above 170 nm. The surface morphology of the NiP detached from the master mold and NiP pattern of different sizes were investigated as well. #

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Electron beam lithography—Resolution limits

Cited by 196 publications

References 17 publications

Nanophotonic structure formation by dry e-beam etching of the resist: resolution limitation origins

Nanophotonic structure formation by dry e-beam etching of the resist: resolution limitation origins

Dopant Driven Electron Beam Lithography

Nanoindentation Analysis for Mechanical Properties of Electroless NiP Imprinting Mold Replicated from Self-Assembled-Monolayer Modified Master Mold

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