2002
DOI: 10.1016/s0167-9317(02)00453-7
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Electron-beam nanolithography and line-edge roughness of acid-breakable resin-based positive resist

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Cited by 5 publications
(2 citation statements)
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“…The lactone group improves PR solubility after exposure, but the high oxygen content of the lactone group can reduce plasma etch resistance. 1, [28][29][30][31][32][33] When 193 nm PR materials were introduced for nanofabrication, plasma etching resistance of resist materials and thus mask durability emerged as an important issue. Photoacid generator ͑PAG͒ and base are additional components of actual 193nm PR systems.…”
Section: A Challenges Of Plasma-resist Interactions For Nanometer Scmentioning
confidence: 99%
“…The lactone group improves PR solubility after exposure, but the high oxygen content of the lactone group can reduce plasma etch resistance. 1, [28][29][30][31][32][33] When 193 nm PR materials were introduced for nanofabrication, plasma etching resistance of resist materials and thus mask durability emerged as an important issue. Photoacid generator ͑PAG͒ and base are additional components of actual 193nm PR systems.…”
Section: A Challenges Of Plasma-resist Interactions For Nanometer Scmentioning
confidence: 99%
“…The result is close to the syndiotactic percentage (75%) of a PMGA obtained through free radical polymerization in solution 22 and indicates that the polymerization in the HFCVD process produces predominantly syndiotactic polymers. 25 Previous work has shown that fluorocarbon films deposited from HFCVD possess grain structures with high rms roughness. at a filament temperature of 180°C shows an undulating morphology with a rms roughness of 1.57 nm.…”
Section: Resultsmentioning
confidence: 99%