1982
DOI: 10.1557/proc-13-653
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Electron Beam Processing of Semiconductors

Abstract: Electron beams can transfer energy very efficiently to semiconductors. Systems have been developed for rapid heating to temperature around 1000°C under a variety of conditions from adiabatic to isothermal. Pulsed, focused, line and synthesized shaped beams are used to obtain a wide range of thermal cycles. The following applications are described: the annealing of ion-implanted Si, particularly the activation of As implants and shallow implants (Rp<150Å), the annealing of Si and Se in GaAs, the e-beam proce… Show more

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