1992
DOI: 10.1116/1.586051
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Electron beam writing of continuous resist profiles for optical applications

Abstract: Deep submicron resist profile simulation and characterization of electron beam lithography system for cell projection and direct writing J. Vac. Sci. Technol. B 15, 2313 (1997; 10.1116/1.589636Optimizing electron beam lithography writing strategy subject to electron optical, pattern, and resist constraints J. Vac. Sci. Technol. B 9, 3063 (1991); 10.1116/1.585370 Resist heating effect in direct electron beam writingThis. article re.ports. on progress in the fabrication bye-beam lithography of high resolution, c… Show more

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Cited by 23 publications
(11 citation statements)
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“…Blazed diffractive elements can be fabricated either by a series of photolithography processes that approximate the surface relief with a multilevel structure [1][2][3][4] or by direct-write technologies, such as single-point laser beam writing in photoresist, 5 single-point diamond turning, 6 or single-point electronbeam (e-beam) writing in polymers. [7][8][9] In this paper we are concerned with the synthesis and the fabrication of diffractive elements composed of binary subwavelength pillars etched in a high-index material deposited on a glass substrate for visible-light operation. Their principle of operation relies on the analogy between periodic subwavelength-structured surfaces and artificial dielectric materials.…”
Section: Introductionmentioning
confidence: 99%
“…Blazed diffractive elements can be fabricated either by a series of photolithography processes that approximate the surface relief with a multilevel structure [1][2][3][4] or by direct-write technologies, such as single-point laser beam writing in photoresist, 5 single-point diamond turning, 6 or single-point electronbeam (e-beam) writing in polymers. [7][8][9] In this paper we are concerned with the synthesis and the fabrication of diffractive elements composed of binary subwavelength pillars etched in a high-index material deposited on a glass substrate for visible-light operation. Their principle of operation relies on the analogy between periodic subwavelength-structured surfaces and artificial dielectric materials.…”
Section: Introductionmentioning
confidence: 99%
“…This causes exposed resist to be soluble for wet development so that it can be etched down to the substrate while unexposed resist remains virtually intact. In constrast to this process, which produces a bi-level topography in resist, GEBL relies on a lateral gradient of M w imparted in the resist to produce a multi-level topography following a timed wet development (Stauffer et al 1992). Illustrated in Figure 4, this is achieved using a dose-modulated electron exposure where doses D 1 < D 2 < D 3 give rise to local average molecular weights M w,1 > M w,2 > M w,3 , and if D 3 is large enough to clear the resist, local resist thicknesses h 1 > h 2 > h 3 = 0 following wet development.…”
Section: Thermally Activated Selective Topography Equilibration (Taste)mentioning
confidence: 99%
“…As an alternative to traditional photo-lithography that employs UV light to pattern photo-resist, electron-beam lithography uses a beam of electrons to generate patterns in the resist 46,47 . The primary advantage of this technique is that it can improve on the diffraction limit of light and make features in the nano-meter regime.…”
Section: E-beam-lithography Technologymentioning
confidence: 99%