Electron Blocking Layer Architecture to enhance the hole injection in the active region for 215 nm Ultra-violet Light Emitting Diode (UVC-LED)

Abstract

This work engineered the p-Electron Blocking Layer (p-EBL) of the AlGaN-based deep ultraviolet (UVC) light-emitting diode (LED) to achieve a high Radiative Recombination Rate (RRR). Carrier concentration can be efficiently injected into the active region by inserting an undoped thin AlGaN layer between the doped p-AlGaN layer as a superlattice. Compared with the UVC-LED with the bulk p-AlGaN EBL, the superlattice LED improves the optical power, holes and electrons concentration, and RRR.